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A high-temperature MEMS heater using suspended serpentine silicon beams as a filament is proposed for an infrared light source. The MEMS heater utilizes suspended silicon beams for thermal isolation and the mechanical support of heat resistors, and Pt/Ti layers for a Joule heating resistor deposited onto suspended silicon beams. An SiO 2 insulator layer was deposited to provide electrical isolation between the thermal resistor and the silicon substrate. The proposed MEMS heater did not require a closed membrane-based back-cavity structure for thermal isolation. The heater is capable of being simply fabricated by a single photolithography process and subsequent silicon anisotropic etching and metal deposition processes. The fabrication process and driving characteristics of the MEMS heater are described. High temperature achieved by the heater was measured by IR camera image processing.

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A method to fabricate suspended silicon nanowires that are applicable to electronic and electromechanical nanowire devices is reported. The method allows for the wafer-level production of suspended silicon nanowires using anisotropic etching and thermal oxidation of single-crystal silicon. The deviation in width of the silicon nanowire bridges produced using the proposed method is evaluated. The NW field-effect transistor (FET) properties of the device obtained by transferring suspended nanowires are shown to be practical for useful functions.

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