This paper provides a TCAD analysis of high performance SiGe heterostructure bipolar and MOSFET transistors fabricated by SiGe BiCMOS technology. The bipolar and MOSFET devices characteristics are presented. High values of operation frequencies, current gains and transconductances of the devices satisfy the requirements in RF mixed-signal IC development for wired optical communication systems.
Automatic electro-thermal analysis is included into Mentor Graphics PCB Design System. The method of simultaneous iteration is used for board-level electro-thermal simulation. New software tool named TransPower is introduced to couple the electrical (Analog Designer) and thermal (BETAsoft) simulators. The design procedure is fully automated, human errors are eliminated, simulation time is significantly decreased, while accuracy and reliability are increased.
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