VLSI device parameters extraction for radiation hardness modeling with SPICE

Petrosjanc, Konstantin O.; Kharitonov, I. A.

doi:10.1109/icmts.1993.292901

Cited by 7 publications

(1 citation statement)

References 22 publications

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“…It is worth mentioning that at 80 krad and 100 krad, the density of the generated interface trapped charges is significantly higher than the generated oxide trapped charges, thus demonstrating that the positive shift of the threshold voltage is caused by interface trapped charges. To evaluate the quantitative changes in the two types of trapped charges and predict their trends, we use the power-law TID model proposed by Petrosjanct et al, [38] where ∆N it and ∆N ot can be fitted by the following formula:…”

Section: Analysis Of Interface Traps and Oxide Trapped Chargesmentioning

confidence: 99%

Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Zhang

Zhu

et al. 2023

Chinese Phys. B

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Lateral type n-channel 4H-SiC MOSFETs fabricated by current industrial process are irradiated with gamma-ray at different irradiation doses in this paper, to make a profound study on the generation mechanism of radiation-induced interface traps and oxide trapped charges. Electrical parameters (e.g. threshold voltage, subthreshold swing and channel mobility) of the device before and after irradiation are investigated, and the influence of the channel orientation ([1$\bar 1$00] and [11$\bar 2$0]) on the radiation effect is discussed for the first time. Positive threshold voltage shift is observed at very low irradiation doses (<100 krad(Si)), the threshold voltage then shifts negatively with dose increasing. It is found that the dependence of interface trap generation on radiation dose is not the same for doses below and above 100 krad. For irradiation doses <100 krad, the radiation-induced interface traps with relatively high generation speeds dominate the competition with radiation-induced oxide trapped charges, contributing to the positive threshold voltage shift correspondingly. All these results provide additional insight into the radiation-induced charge trapping mechanism in SiO2/SiC interface.

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Section: Analysis Of Interface Traps and Oxide Trapped Chargesmentioning

confidence: 99%

Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Zhang

Zhu

et al. 2023

Chinese Phys. B

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Compact modeling of environmentally induced radiation effects on electrical devices

Huang

Francis

Lostetter

et al.

2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720)

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This paper presents the feasibility of formalizing a compact modeling methodology for environmentally induced radiation effects, and of implementing that methodology into the Paragon compact modeling tool. For demonstration purposes, the paper will focus on two specific radiation effects implemented in a MOSFET device model. These two effects were chosen in order to illustrate two differing forms of model development. The first form takes existing device models and modifies the equations and/or variables already existing within that model to achieve the required results (behavioral modification). The second form adds completely new equations and variables to existing device models (behavioral augmentation).The MOSFET (1) threshold voltage shift due to total ionizing dosage (TID) and (2) leakage current increase due to TID, are two major device effects that fulfill both of these requirements. Voltage shift and leakage current are critical design issues in rad-hard electronics and space environments. The threshold voltage shift effects are implemented through the modification of device model equations, while leakage current increases are implemented with added behavioral macros to the model topology, thus fulfilling the second requirement. The use of the modified compact MOSFET model is illustrated in the simulation of an op-amp based filter. Gain and frequency shiAs can he observed and compared as the circuit ahsorhs differing amounts of TID.

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Account for Radiation Effects in Signal Integrity Analysis of PCB Digital Systems

Petrosyants

Kharitonov

2013

2013 Euromicro Conference on Digital System Design

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A method of account for radiation effects (total dose and particle fluence) in signal integrity analysis of digital system by using IBIS model is presented. It is shown that account for these effects in IBIS models can be performed by correction the input impedances of protection circuits (GND_Clamp and POWER_Clamp), output MOSFETs (PULL_UP, PULL_DOWN) characteristics and RAMP parameters in according with the known physical relations. Examples of digital IC output and crosstalk signals simulation with HyperLynx software using the created IBIS model is presented.

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VLSI device parameters extraction for radiation hardness modeling with SPICE

Cited by 7 publications

References 22 publications

Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Compact modeling of environmentally induced radiation effects on electrical devices

Account for Radiation Effects in Signal Integrity Analysis of PCB Digital Systems

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