The growth of ferroelectric lead zirconate titanate (PZT) films by rf-sputtering using a facing targets geometry is described. This study focuses on the influence of the substrate on PZT thin film composition, structure, and electrical properties. The deposition temperatures ranged from room temperature to 700 °C and the process gas was a mixture of argon and oxygen. Effects of deposition conditions and post-deposition annealing on film composition, microstructure, and properties were evaluated using Rutherford backscattering spectroscopy (RBS), x-ray diffraction, electron microscopy, and measurements of the permittivity and polarization. The microstructure, composition, and permittivity of the films were found to be strongly dependent on the substrate temperature and on the preparation history of the films.
A review of the history of ferroelectric (FE) thin film synthesis is given covering the period of the 1960's to the present. Early methods, materials and applications are discussed. An assessment of the recent upsurge in activity takes note of current targeted applications, including nonvolatile memory, piezoelectric actuators, capacitors, and electro-optic devices. Focus is placed on similarities and differences in the most common film deposition processes. Comparison of microstructure and composition variation seen in films deposited by sputtering, laser ablation, and solution deposition is made. More detailed understanding of process-microstructure relations is stressed as necessary for film property control. Also discussed are the roles of substrate interactions and interface layers in thin film growth.
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