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Gate length of 1-μm enhancement-mode n-channel GaN MOSFET with MgO and hybrid MgO-TiO 2 stacked gate dielectrics were characterized. The leakage current of a stacked MgO and hybrid MgO-TiO 2 MOS capacitor can be as low as 6.2 × 10 −9 and 6.9 × 10 −9 A/cm 2 at ±1-V bias, respectively. Through a self-aligned process, superior I D -V D and I D -V G electrical characteristics of a MOSFET were obtained. The maximum drain current is 3.69 × 10 −5 A/μm at a gate voltage V g of 8 V and a drain voltage V D of 10 V. The subthreshold swing is 342 mV/dec, and the I ON /I OFF is 5.7 × 10 4 .