No abstract

Acidogenic bacteria within dental plaque biofilms are the causative agents of caries. Consequently, maintenance of a healthy oral environment with efficient biofilm removal strategies is important to limit caries, as well as halt progression to gingivitis and periodontitis. Recently, a novel cleaning device has been described using an ultrasonically activated stream (UAS) to generate a cavitation cloud of bubbles in a freely flowing water stream that has demonstrated the capacity to be effective at biofilm removal. In this study, UAS was evaluated for its ability to remove biofilms of the cariogenic pathogen Streptococcus mutans UA159, as well as Actinomyces naeslundii ATCC 12104 and Streptococcus oralis ATCC 9811, grown on machine-etched glass slides to generate a reproducible complex surface and artificial teeth from a typodont training model. Biofilm removal was assessed both visually and microscopically using high-speed videography, confocal scanning laser microscopy (CSLM), and scanning electron microscopy (SEM). Analysis by CSLM demonstrated a statistically significant 99.9% removal of S. mutans biofilms exposed to the UAS for 10 s, relative to both untreated control biofilms and biofilms exposed to the water stream alone without ultrasonic activation (P < 0.05). The water stream alone showed no statistically significant difference in removal compared with the untreated control (P = 0.24). High-speed videography demonstrated a rapid rate (151 mm(2) in 1 s) of biofilm removal. The UAS was also highly effective at S. mutans, A. naeslundii, and S. oralis biofilm removal from machine-etched glass and S. mutans from typodont surfaces with complex topography. Consequently, UAS technology represents a potentially effective method for biofilm removal and improved oral hygiene.

Abstract-Biosensors are commonly produced using an SOI CMOS process and advanced lithography to define nanowires. In this work, a simpler and cheaper junctionless 3-mask process is investigated, which uses thin film technology to avoid the use of SOI wafers, in-situ doping to avoid the need for ion implantation and direct contact to a low doped polysilicon film to eliminate the requirement for heavily doped source/drain contacts. Furthermore, TiN is used to contact the biosensor source/drain because it is a hard, resilient material that allows the biosensor chip to be directly connected to a printed circuit board without wire bonding. pH sensing experiments, combined with device modelling, are used to investigate the effects of contact and series resistance on the biosensor performance, as this is a key issue when contacting directly to low doped silicon. It is shown that in-situ phosphorus doping concentrations in the range 4×10

In this paper we present significant progress on the fabrication of small-core lead-silicate holey fibers. The glass used in this work is SF57, a commercially available, highly nonlinear Schott glass. We report the fabrication of small core SF57 fibers with a loss as low as 2.6 dB/m at 1550 nm, and the fabrication of fibers with a nonlinear coefficient as high as 640 W-1 km-1. We demonstrate the generation of Raman solitons at ~1550 nm in a short length of such a fiber which highlights the fact that the group velocity dispersion can be anomalous at these wavelengths despite the large normal material dispersion of the glass around 1550nm., "Four-wave mixing based 10-Gb/s tunable wavelength conversion using a holey fiber with a high SBS threshold," IEEE Photon. Technol. Lett. 15, 440-442 (2003).

No abstract

New methods for achieving high‐quality conducting oxide metasurfaces are of great importance for a range of emerging applications from infrared thermal control coatings to epsilon‐near‐zero nonlinear optics. This work demonstrates the viability of plasma patterning as a technique to selectively and locally modulate the carrier density in planar Al‐doped ZnO (AZO) metasurfaces without any associated topographical surface profile. This technique stands in strong contrast to conventional physical patterning which results in nonplanar textured surfaces. The approach can open up a new route to form novel photonic devices with planar metasurfaces, for example, antireflective coatings and multi‐layer devices. To demonstrate the performance of the carrier‐modulated AZO metasurfaces, two types of devices are realized using the demonstrated plasma patterning. A metasurface optical solar reflector is shown to produce infrared emissivity equivalent to a conventional etched design. Second, a multiband metasurface is achieved by integrating a Au visible‐range metasurface on top of the planar AZO infrared metasurface. Independent control of spectral bands without significant cross‐talk between infrared and visible functionalities is achieved. Local carrier tuning of conducting oxide films offers a conceptually new approach for oxide‐based photonics and nanoelectronics and opens up new routes for integrated planar metasurfaces in optical technology.

We demonstrate a grayscale photolithography technique which uses a thin phase-change film as a photomask to locally control the exposure dose and allows three-dimensional (3D) sculpting photoresist for the manufacture of 3D structures. Unlike traditional photomasks, the transmission of the phase-change material photomask can be set to an arbitrary gray level with submicron lateral resolution, and the mask pattern can be optically reconfigured on demand, by inducing a refractiveindex-changing phase-transition with femtosecond laser pulses. We show a spiral phase plate and a phase-type super-oscillatory lens fabricated on Si wafers to demonstrate the range of applications that can be addressed with this technique.

Ge 2 Sb 2 Te 5 (GST) phase change nanowires have been fabricated using a top-down spacer etch process. This approach enables controls over the dimension and location of the nanowires without affecting the electrical properties. Phase change devices based on these nanowires have been used to systematically investigate the contact resistance between GST phase change material and TiN metal electrodes. The specific contact resistance was found to be 7.96 × 10 −5 Ω cm 2 for crystalline GST and 6.39 × 10 −2 Ω cm 2 for amorphous GST. The results suggest that contact resistance plays a dominant role in the total resistance of GST memory device in both crystalline and amorphous states.