Polymer based MEMS and microfluidic devices have the advantages of mechanical flexibility, lower fabrication cost and faster processing over silicon based ones. Also, many polymer materials are considered biocompatible and can be used in biological applications. A valuable class of polymers for microfabricated devices is piezoelectric functional polymers. In addition to the normal advantages of polymers, piezoelectric polymers can be directly used as an active material in different transduction applications. This paper gives an overview of piezoelectric polymers based on their operating principle. This includes three main categories: bulk piezoelectric polymers, piezocomposites and voided charged polymers. State-of-the-art piezopolymers of each category are presented with a focus on fabrication techniques and material properties. A comparison between the different piezoelectric polymers and common inorganic piezoelectric materials (PZT, ZnO, AlN and PMN–PT) is also provided in terms of piezoelectric properties. The use of piezopolymers in different electromechanical devices is also presented. This includes tactile sensors, energy harvesters, acoustic transducers and inertial sensors.

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Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m-2 and 0.9±0.1 C m-2, for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

This work presents an SU-8 surface micromachining process using amorphous silicon as a sacrificial material, which also incorporates two metal layers for electrical excitation. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic applications due to its mechanical properties, biocompatibility and low cost. Amorphous silicon is used as a sacrificial layer in MEMS applications because it can be deposited in large thicknesses, and can be released in a dry method using XeF 2 , which alleviates release-based stiction problems related to MEMS applications. In this work, an SU-8 MEMS process was developed using α-Si as a sacrificial layer. Two conductive metal electrodes were integrated in this process to allow out-of-plane electrostatic actuation for applications like MEMS switches and variable capacitors. In order to facilitate more flexibility for MEMS designers, the process can fabricate dimples that can be conductive or nonconductive. Additionally, this SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were optimized for two sets of thicknesses: thin (5-10 μm) and thick (130 μm). The process was tested fabricating MEMS switches, capacitors and thermal actuators.

Semi-Dynamic Flip-Flops are widely used in state-of-art microprocessors. Moreover, scaling down traditional CMOS technology faces major challenges which rises the need for new devices for replacement. FinFET technology is a potential replacement due to similarity in both fabrication process and theory of operation to current CMOS technology. Hence, this paper presents the study of Semi Dynamic Flip Flops using both Independent gate and Tied gate FinFET devices in 32nm technology node. Furthermore, it studies the performance of these new circuits under process variations.