Fabrication of SU-8 low frequency electrostatic energy harvester

Ramadan, Khaled; Foulds, Ian G.

doi:10.1109/iceac.2011.6136689

Cited by 5 publications

(4 citation statements)

References 13 publications

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“…A reference accelerometer with a sensitivity of 40 mV g −1 was also mounted on the shaker for calibration. The characterization setup is shown in figure 8 [18]. A 6 V dc-bias voltage source was used to induce an initial charge on the 1 µF bias capacitor.…”

Section: Characterization Of the Harvester Performancementioning

confidence: 99%

A hybrid electrostatic micro-harvester incorporating in-plane overlap and gap closing mechanisms

Çelik‐Butler²,

Butler³

2015

J. Micromech. Microeng.

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This paper presents a novel design, fabrication and characterization of an electrostatic micro-energy scavenger, converting the environmental vibration. The design incorporates MEMS comb-drive in-plane overlap as well as in-plane gap closing topologies into one hybrid structure. The device geometry and dimensions are optimized to maximize the energy harvesting efficiency. UV-LIGA process combined with nickel electroplating is utilized to fabricate the devices. A shaker platform in conjunction with a calibrated accelerometer is used to measure the harvested ac voltage with varying acceleration. Peak to peak value of 0.800 V is generated under external acceleration magnitude of 78.4 m s−2 at a vibration frequency of 1.90 kHz. Power predictions based on electromechanical and finite element method (FEM) simulations agree with the measured data.

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Section: Characterization Of the Harvester Performancementioning

confidence: 99%

A hybrid electrostatic micro-harvester incorporating in-plane overlap and gap closing mechanisms

Çelik‐Butler²,

Butler³

2015

J. Micromech. Microeng.

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“…Such devices can be utilized in different applications, such as low-frequency energy harvesting [37] and sensors [15]. The thick SU-8 process was examined by fabricating a low-frequency electrostatic energy harvester [38]. Figure 8 shows SEM images of the fabricated capacitors of 1.5 × 1.5 mm 2 area.…”

Section: The Thick Su-8-process-based Devicementioning

confidence: 99%

“…Figure 8 shows SEM images of the fabricated capacitors of 1.5 × 1.5 mm 2 area. A detailed explanation of the device concept and design parameters is published in [38]. The close-up image shows the out-of-plane deformation in the 5 μm thin layer.…”

Section: The Thick Su-8-process-based Devicementioning

confidence: 99%

“…The integration is possible due to the low thermal budget of the SU-8 process which allows fabricating SU-8 MEMS structures on top of the chip after the metallization layers. A study of the thermal budget of the thick SU-8 process was previously presented [38] and compared to the thermal budget limit of the 0.25 μm CMOS process [39]. The thermal budget limit at a certain temperature is defined as the time duration at that temperature that increases the viaresistance of the metallization layers by 10% of its value.…”

Section: The Advantages Of the Su-8mems Process With Two Electrodes U...mentioning

confidence: 99%

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Development of an SU-8 MEMS process with two metal electrodes using amorphous silicon as a sacrificial material

Ramadan

Nasr

Foulds

2013

J. Micromech. Microeng.

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This work presents an SU-8 surface micromachining process using amorphous silicon as a sacrificial material, which also incorporates two metal layers for electrical excitation. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic applications due to its mechanical properties, biocompatibility and low cost. Amorphous silicon is used as a sacrificial layer in MEMS applications because it can be deposited in large thicknesses, and can be released in a dry method using XeF 2 , which alleviates release-based stiction problems related to MEMS applications. In this work, an SU-8 MEMS process was developed using α-Si as a sacrificial layer. Two conductive metal electrodes were integrated in this process to allow out-of-plane electrostatic actuation for applications like MEMS switches and variable capacitors. In order to facilitate more flexibility for MEMS designers, the process can fabricate dimples that can be conductive or nonconductive. Additionally, this SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were optimized for two sets of thicknesses: thin (5-10 μm) and thick (130 μm). The process was tested fabricating MEMS switches, capacitors and thermal actuators.

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Design and optimization of an electrostatic micro-harvester for sensors applications

Çelik‐Butler

Butler

2013

2013 Ieee Sensors

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Fabrication of SU-8 low frequency electrostatic energy harvester

Cited by 5 publications

References 13 publications

A hybrid electrostatic micro-harvester incorporating in-plane overlap and gap closing mechanisms

A hybrid electrostatic micro-harvester incorporating in-plane overlap and gap closing mechanisms

Development of an SU-8 MEMS process with two metal electrodes using amorphous silicon as a sacrificial material

Design and optimization of an electrostatic micro-harvester for sensors applications

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