This paper presents results of a basic study of high-performance surface acoustic wave-semiconductor integrated circuits in which highly functional compound semiconductor devices and highly efficient surface acoustic wave (SAW) devices are monolithically integrated on the same substrate using epitaxial lift-off (ELO) technology. We improved the epitaxial lift-off process and made advances in wafer handling, etching and bonding. Using these improved processes, we have fabricated basic circuits for SAW-semiconductor cointegrated devices and succeeded measuring basic characteristics.
This paper describes the results of investigating the microscopic features of a commercially available 35°-rotated Y-cut (ST-cut) quartz surface using atomic force microscopy (AFM) and X-ray diffraction analysis. X-ray diffraction analysis suggests that distortions in the peaks are due to the existence of a dislocation or plane slip near the surface, but precise analysis was impossible in this experiment. Data from AFM showed that a flat area with an interesting particle image exists on the surface along with a heterogeneous damage layer at a depth of about 30 nm.
Free-carrier Faraday rotation and ellipticity in n-type InSb samples with different electron densities have been measured in order to determine electron-impurity scattering times in the presence of magnetic fields at liquid helium temperatures.The experimental apparatus used consisted of a 4 T (40 kG) transverse-access optical cryostat in which the temperature of the sample could be held at liquid helium temperatures. Plane-polarised radiation from a pulsed far-infrared laser which produced a wavelength of 0.337 mm was passed through the sample and detected by means of a Golay cell whose output was gated, integrated and displayed on a pen recorder.Comparison of the experimental results for n-type InSb with the curves computed from the theoretical expressions yielded scattering times of the order of 10"' S at liquid helium temperatures for two different samples. These scattering times are in good agreement with earlier measurements of scattering times at these temperatures obtained by other workers from measurements of cyclotron resonance linewidths and Faraday rotation. There is. however, a considerable discrepancy between electron-impurity scattering times obtained by Faraday rotation and ellipticity, and field-dependent DC scattering times calculated from DC mobility measurements. Discrepancies also exist between the measured and computed values of the ellipticity squared near the cyclotron resonant field.
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