Integration of Semiconductor Devices with Surface Acoustic Wave Using    the Epitaxial Lift-Off Process

Suzuki, Hiroji; Komine, Kenji; Huang, Qixin; Hohkawa, K.

doi:10.1143/jjap.36.3109

Cited by 10 publications

(4 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because of these advantages, SAW technology is often applied in the fabrication of various electronics devices such as RF filters and sensors (1)(2)(3)(4).…”

Section: Introductionmentioning

confidence: 99%

“…Surface acoustic wave (SAW) devices have been widely used in various applications and have several advantages: (a) extremely high sensitivity, (b) high SNR value, (c) small size, (d) wide operating frequency range (10 MHz to 1 GHz), and (e) ease of integration with planar processing technology. Because of these advantages, SAW technology is often applied in the fabrication of various electronics devices such as RF filters and sensors (1)(2)(3)(4).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effects of SAW Propagation with Electrochemical Deposition of Ge Film on LiNbO₃ Substrate

Kaneshiro¹,

Gushiken²

2012

ECS Trans.

View full text Add to dashboard Cite

We present the results of a basic study on surface acoustic wave (SAW) propagation characteristics with electrochemical deposition of Ge thin films for functional devices. We investigated forming Ge film on the SAW propagation path by using electrochemical deposition as a new process approach. Energy-dispersive X-ray spectroscopy (EDX) analysis of deposited particles indicated that the electrochemical deposition of Ge was successfully achieved by applying pulse-potential to the working electrode. The experimental results of the fabricated device show that the SAW propagation characteristics of LiNbO 3 with Ge has a frequency shift toward a higher range due to the change in the mass-loading of SAW propagation after Ge deposition. These experimental results indicate the potential use for functional devices.

show abstract

“…Because of these advantages, SAW technology is often applied in the fabrication of various electronics devices such as RF filters and sensors (1)(2)(3)(4).…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effects of SAW Propagation with Electrochemical Deposition of Ge Film on LiNbO₃ Substrate

Kaneshiro¹,

Gushiken²

2012

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…Using this process many GaAs but also InP based devices such as photodiodes [13,14], LEDs [15,16], LASERs [17,18], HEMTs [19] and FETs [20] transferred to silicon, sapphire and glass plates were demonstrated. In addition ELO devices were directly combined with glass and Lithium Niobate wave guides [21,22], quartz based structures [23] and silicon integrated receiver or driver circuits [24,25].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Lift‐Off for large area thin film III/V devices

Schermer

Mulder

Bauhuis

et al. 2005

Physica Status Solidi (a)

110

View full text Add to dashboard Cite

The present work describes the study and improvement of the Epitaxial Lift-Off (ELO) technique, which is used to separate III/V device structures from their GaAs substrates. As a result the ELO method, initially able to separate millimetre sized GaAs layers with a lateral etch rate of about 0.3 mm/h, has been developed to a process capable to free entire 2″ epitaxial structures from their substrates with etch rates up to 30 mm/h. It is shown that with the right deposition and ELO strategy, the thin-film III/V structures can be adequately processed on both sides. In this way semi-transparent, bifacial solar cells on glass were produced with a total area efficiency in excess of 20% upon front side illumination and more than 15% upon back side illumination. The cell characteristics indicate that, once the thin film processing has been optimized, ELO cells require a significantly thinner base layer than regular III/V cells on a GaAs substrate and at the same time have the potential to reach a higher efficiency.

show abstract

“…Using ELO, several devices have already been demonstrated, such as GaAs HEMTs [7], and GaAs [8][9][10] and InGaP [11][12][13] solar cells on silicon or glass. In addition, the integration of III/ V ELO-devices with other structures, like A lGaAs/G aA s two dimensional electron gas bolometric mixers combined with a quartz-based microstrip circuit [14], and semiconductorsurface acoustic wave devices [15], has been demonstrated. ELO, however, is only of interest for industrial use if the device and substrate are separated with a sufficiently high etch rate.…”

Section: Introductionmentioning

confidence: 99%

Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process

et al. 2004

View full text Add to dashboard Cite

lateral etch rate of AlGaAs in HF in the 'Epi taxial Lift-Off' (ELO) process consists of two parts, an intrinsic and a radius-induced part. The intrinsic part is studied with a new approach in which multiple release layers are introduced in one sample. By letting an essential ELO process parameter vary over the different release layers, this parameter is exam ined, using only samples from one wafer. In this study, the influence of thickness, aluminium fraction, and doping concen tration of the release layer on the lateral etch rate is investigated. For release layers with thicknesses below 10 nm, a positive correlation between thickness and intrinsic etch rate is found. Thicker release layers do not result in higher etch rates. Increas ing aluminium fractions in the Al*Ga1-^ As release layers result in higher etch rates. For aluminium fractions between 0.3 and 1, this effect covers almost six orders of magnitude. From the width of the V-shaped etch slits in samples that have been etched for 12 hours or more, the selectivity, i.e., the ratio of the etch rate of Al*Ga1-*As to GaAs, is determined. Selectivities between 4.3 and 8.6 x 105 are found for * = 0.3 and * = 1, respectively. A variation in silicon doping is found to have no effect on the lateral etch rate, while increased zinc doping raises the etch rate significantly.

show abstract

Integration of Semiconductor Devices with Surface Acoustic Wave Using the Epitaxial Lift-Off Process

Cited by 10 publications

References 2 publications

Effects of SAW Propagation with Electrochemical Deposition of Ge Film on LiNbO₃ Substrate

Effects of SAW Propagation with Electrochemical Deposition of Ge Film on LiNbO₃ Substrate

Epitaxial Lift‐Off for large area thin film III/V devices

Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process

Contact Info

Product

Resources

About

Integration of Semiconductor Devices with Surface Acoustic Wave Using the Epitaxial Lift-Off Process

Cited by 10 publications

References 2 publications

Effects of SAW Propagation with Electrochemical Deposition of Ge Film on LiNbO3 Substrate

Effects of SAW Propagation with Electrochemical Deposition of Ge Film on LiNbO3 Substrate

Epitaxial Lift‐Off for large area thin film III/V devices

Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process

Contact Info

Product

Resources

About

Effects of SAW Propagation with Electrochemical Deposition of Ge Film on LiNbO₃ Substrate

Effects of SAW Propagation with Electrochemical Deposition of Ge Film on LiNbO₃ Substrate