An advanced e-beam mask-writing system HL-800M has been developed for the 0.25-jim rule-devices. To meet the design-rule, the targets of this system specifications are critical dimension ( CD ) control of 30 nm, positioning accuracy of 40 nm, and throughput over 0.5 plate per hour. To achieve CD control, we judged that it was inevitable to increase the acceleration voltage up to 50kV for patterns smaller than 2 jim. However, for patterns larger than 5 tim, the e-beam proximity-effect causes the pattern-width linearity to be worse. To achieve the sufficient linearity, proximity correction on the hardware module of the system was performed. This hardware module executes proximity effect correction for each patterns over the area on the plate, so that total throughput was improved compared with that of the correction by software. Besides, a noise cancellation module was introduced to reduce the errors in the e-beam shot positions. This module detects the vibration noise caused by with the power-supply frequency and feeds the correction signal back to the e-beam deflectors. For positioning accuracy, in addition to the mirror correction using hardware for the stage interferometer, a new positioning-correction function depending on the coordinates of the system was developed. In the results of the exposure evaluations, CD uniformity on a 6025 plate showed width-deviations of 3 i were 3 1 nm (X) and 18 nm (Y). Pattern-width linearities for various kinds of patterns were within 50 nm.Furthermore, the noise cancellation module was made the amplitude of the e-beam vibration reduced from 33 nm to less than 8 nm. For positioning accuracy, evaluation patterns measured by the LMS2O2O ( Leica ) showed sufficient results for our target. For throughput, the average of the writing time per 6-inch plate for ten patterns is shorter than our targeted throughput with a dosage of 4 jiC/cm2. The HL-800M system is capable of producing reticles for 0.25-jim design-rule.
In this paper, the key features and results of the new advanced electron beam (c-beam) reticle writing system HL-900M are shown. This new system, based on HL-800M techno1ogy', has been improved from the both sides of hardware and software with introducing some new technologies. The new electron beam optical column has been introduced to keep enough stability against environmental fluctuations. X-Y stage mechanism and high precision temperature control system have been refreshed to promise highly positioning accuracy. Parallel processing exposure function makes throughput improved even with handling the huge amount of data, such as over 20 Gbytes in the standard specification system. As some results of evaluation tests, the critical dimension (CD) accuracy of 12 nm (3cr), the pattern positioning accuracy of 25 nm (3cr) and the stitching accuracy of 15 nm (Imeanl+3) were obtained. The total performance of this system is satisfied with the specification of the 0. I 8-0. 15 jim node reticles on production levels and development of 0. 13 tm node reticles.
Articles you may be interested inResolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process Low energy electron-beam proximity projection lithography: Discovery of a missing link Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system A mask electron-beam writer for production lines beyond 100 nm was developed. The system HL-7000M is equipped with cell projection function for high critical dimension accuracy. The newly developed technologies are a cell projection optics, objective lens optics, a low distortion stage, a highly accurate control electronics, and high accuracy proximity effect correction hardware. This article describes the details of the electron optics and its performances.
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