Development of an electron-beam lithography system for high accuracy masks

Abstract

Articles you may be interested inResolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process Low energy electron-beam proximity projection lithography: Discovery of a missing link Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system A mask electron-beam writer for production lines beyond 100 nm was developed. The system HL-7000M is equipped with cell projection function for high critical dimension accuracy. The newly developed technologies are a cell projection optics, objective lens optics, a low distortion stage, a highly accurate control electronics, and high accuracy proximity effect correction hardware. This article describes the details of the electron optics and its performances.

Sub-10 nm electron beam lithography using cold development of poly(methylmethacrylate)

“…Because the ultimate resolution of electron beam lithography ͑EBL͒ can be below 10 nm, and due to its high flexibility, compatibility, and availability, EBL is an important patterning method for nanosystems and devices, such as Coulomb blockade devices, [1][2][3] molecular electronics, 4,5 highdensity magnetic storage, 6 mold making for nanoimprint lithography, 7 and high-precision mask making, 8 among others. During the last four decades, many systems have been developed and processing techniques explored to achieve sub-10 nm fabrication resolution.…”