Electron-beam mask writing system for 0.25-μm device generation

Mizuno, Kazui; Kawasaki, Kenji; Itoh, Hiroyuki; Satoh, Hiroko; Someda, Yasuhiro; Saitou, Norio

doi:10.1117/12.245235

Cited by 1 publication

(2 citation statements)

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“…The first occurred in the late 1990s to early 2000s. During that time, SVSB systems were developed by Toshiba Machine (the predecessor of NuFlare Technology), Hitachi, [21][22][23] and JEOL, but Gaussian (or point) beam systems from ETEC 24) were mainly used. In the latter systems, inputted mask pattern data is converted to pixel data, and the mask pattern is written by a point beam in raster scanning (Fig.…”

Section: Introductionmentioning

confidence: 99%

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Recent progress and future of electron multi-beam mask writer

Yasuda¹,

Nomura²,

Matsumoto³

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, development of NuFlare Technology’s multi-beam (MB) mask writing system MBM-2000 series is reviewed, and future plans for the MBM series are discussed. The MB mask writing systems were designed on the basis of unique concepts suitable for high-volume production of leading-edge masks, i.e., high beam current density, a reliable beam blanking aperture array (BAA) system with a 50-keV single-stage acceleration optics, high-speed inline pixel-level dose correction, and a distinctive hardware system for charging effect reduction. The latest MB mask writing system, MBM-2000PLUS, achieves a high throughput of 8.7 hours in a 104×130 mm2 writing area for a 150 μC/cm2 resist thanks to a high beam current density of 3.2 A/cm2. In addition, a global position accuracy of 1.2 nm, a local position accuracy of 0.5 nm, and a local critical dimension uniformity of 0.61 nm are achieved. The BAA system has shown long-term stable operation for more than one year. The high productivity and writing accuracy realized by NuFlare Technology’s concepts will contribute to further miniaturization of semiconductors.

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Section: Introductionmentioning

confidence: 99%

“…Eventually, the SVSB systems came to dominate mask manufacturing. [3][4][5][6][7][8][9][21][22][23] The SVSB technology, however, faces difficulties beyond the 5 nm node, where the introduction of inverse lithography technology [25][26][27] makes LSI design no longer simple like a complex curve pattern (Fig. 3).…”

Section: Introductionmentioning

confidence: 99%