A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.
In plasma spraying, hydrogen is widely used as a secondary working gas. Under low-pressure conditions, even small amounts of hydrogen can have a significant effect on the plasma jet as mechanisms such as diffusion and recombination come into play. This study investigates the influence of Ar-H2 mixtures on electron densities, temperature distributions, and local composition in the plasma jet using optical emission spectroscopy. Several mechanisms reported in the literature are consulted to explain the observed phenomena.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.