Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

Abstract

A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.

Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in n- and p-type silicon

“…In turn, this led to the fact that the differ ence between τ ann and τ trans was found to be not very large for structures of this type; by the moment of practically complete disappearance of the H029 peak, a considerable fraction of had already trans formed into C i O i . Similar features of the kinetics of C i annealing and of formation of the H035 peak were also observed previously [6]. The estimation of f s from the data shown in Fig.…”

“…11 2014 conclude that the value of f s is significantly exceeds zero. At the same time, on the basis of data on anneal ing of the electron trap E c -0.06 eV it was concluded in [6] that only process (2) takes place and, corre spondingly, f s is to be equal to zero. The contradiction consists in the entire publication [6].…”

“…At the same time, on the basis of data on anneal ing of the electron trap E c -0.06 eV it was concluded in [6] that only process (2) takes place and, corre spondingly, f s is to be equal to zero. The contradiction consists in the entire publication [6]. The authors of [5] assumed that this contradiction can be accounted for by the presence of yet another trap with a level at about E c -0.35 eV; however, this trap is assumed to be unrelated to C i O i .…”

“…in p Si can be described by two par allel reactions: (1) At the same time, it was stated [5,6] that, in n Si, only the following subsequent process takes place:…”

DLTS andin situ C–Vanalysis of trap parameters in swift 50 MeV Li3+ion-irradiated Ni/SiO2/Si MOS capacitors

“…The values of the effective recombination lifetime and total trap concentration of the observed deep level defects are also presented in Table 1. The deep level defects in silicon have been studied by many research groups (16)(17)(18), and the identification of the defect type is made on the basis of the activation energy and capture cross-section and a comparison with those reported in the literature. The E in the defect label symbolizes an electron trap.…”