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The optical gap Eo and photocurrent peak Ep were investigated in amorphous SnS2 films evaporated onto glass substrates kept at a temperature from 294 to 609 K. For substrate temperatures up to 343 K, the film grew into an amorphous state with Eo=1.05+or-0.1 eV and Ep=2.1+or-0.05 eV. With increasing temperature, Eo increased markedly to 1.93 eV, while Ep decreased to 1.50 eV. By considering the results of radial distribution function obtained from the analysis of X-ray diffraction, the increase of Eo was explained in terms of a transition from an amorphous to a polycrystalline state. The substrate temperature dependence of the density of states was discussed including the result of two-step activation processes of electrical conductivity.

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