In this feature article, we explore the electronic and structural phase transformations of ternary vanadium oxides with the composition MxV2O5 where M is an intercalated cation. The periodic arrays of intercalated cations ordered along quasi-1D tunnels or layered between 2D sheets of the V2O5 framework induce partial reduction of the framework vanadium atoms giving rise to charge ordering patterns that are specific to the metal M and stoichiometry x. This periodic charge ordering makes these materials remarkably versatile platforms for studying electron correlation and underpins the manifestation of phenomena such as colossal metal-insulator transitions, quantized charge corrals, and superconductivity. We describe current mechanistic understanding of these emergent phenomena with a particular emphasis on the benefits derived from scaling these materials to nanostructured dimensions wherein precise ordering of cations can be obtained and phase relationships can be derived that are entirely inaccessible in the bulk. In particular, structural transformations induced by intercalation are dramatically accelerated due to the shorter diffusion path lengths at nanometer-sized dimensions, which cause a dramatic reduction of kinetic barriers to phase transformations and facilitate interconversion between the different frameworks. We conclude by summarizing numerous technological applications that have become feasible due to recent advances in controlling the structural chemistry and both electronic and structural phase transitions in these versatile frameworks.

Achieving directional charge transfer across semiconductor interfaces requires careful consideration of relative band alignments. Here, we demonstrate a promising tunable platform for light harvesting and excited-state charge transfer based on interfacing β-Pb x V 2 O 5 nanowires with CdSe quantum dots. Two distinct routes are developed for assembling the heterostructures: linker-assisted assembly mediated by a bifunctional ligand and successive ionic layer adsorption and reaction (SILAR). In the former case, the thiol end of a molecular linker is found to bind to the quantum dot surfaces, whereas a protonated amine moiety interacts electrostatically with the negatively charged nanowire surfaces. In the alternative SILAR route, the surface coverage of CdSe nanostructures on the β-Pb x V 2 O 5 nanowires is tuned by varying the number of successive precipitation cycles. High-energy valence band X-ray photoelectron spectroscopy measurements indicate that "mid-gap" states of the β-Pb x V 2 O 5 nanowires derived from the stereoactive lone pairs on the intercalated lead cations are closely overlapped in energy with the valence band edges of CdSe quantum dots that are primarily Se 4p in origin. Both the midgap states and the valence-band levels are in principle tunable by variation of cation stoichiometry and particle size, respectively, providing a means to modulate the thermodynamic driving force for charge transfer. Steady-state and time-resolved photoluminescence measurements reveal dynamic quenching of the trapstate emission of CdSe quantum dots upon exposure to β-Pb x V 2 O 5 nanowires. This result is consistent with a mechanism involving the transfer of photogenerated holes from CdSe quantum dots to the midgap states of β-Pb x V 2 O 5 nanowires. ■ INTRODUCTIONTuning interfaces between disparate semiconductors, between molecules and semiconductor surfaces, and between semiconductors and metals remains of paramount importance for electronics, optoelectronics, photocatalysis, photovoltaics, and electrochemical energy storage. 1−4 Interfaces assume special significance for nanostructures given their high surface-tovolume ratios. Nanoscale heterostructures are of particular interest for photocatalysis owing to the tunability of the energies of the valence and conduction band edges of semiconductors as a function of finite size and doping, which allows for different components performing discrete functions to be assembled within modular platforms to facilitate sequential light-harvesting, charge transfer, and catalytic processes. 4,5 To enable programmable cascades of directional charge transfer reactions, heterostructures need to be designed keeping in mind several considerations such as the nature of the interface, the thermodynamics of band alignments between different components, and the kinetics of charge transfer. In this work, we have sought to design nanoscale heterostructures to exploit the availability of midgap states energetically positioned between the valence and conduction bands of a transition metal oxi...

The thermally driven orders-of-magnitude modulation of resistance and optical transmittance observed in VO2 makes it an archetypal first-order phase transition material and underpins functional applications in logic and memory circuitry, electromagnetic cloaking, ballistic modulation, and thermochromic glazing to provide just a few representative examples. VO2 can be reversibly switched from an insulating to a metallic state at an equilibrium transition temperature of 67 °C. Tuning the phase diagram of VO2 to bring the transition temperature closer to room temperature has been a longstanding objective and one that has tremendous practical relevance. Substitutional incorporation of dopants has been the most common strategy for modulating the metalinsulator transition temperature but requires that the dopants be incorporated during synthesis. Here we demonstrate a novel postsynthetic diffusive annealing approach for incorporating interstitial B dopants within VO2. The postsynthetic method allows for the transition temperature to be programmed after synthesis and furthermore represents an entirely distinctive mode of modulating the phase diagram of VO2. Local structure studies in conjunction with density functional theory calculations point to the strong preference of B atoms for tetrahedral coordination within interstitial sites of VO2; these tetrahedrally coordinated dopant atoms hinder the rutile → monoclinic transition by impeding the dimerization of V–V chains and decreasing the covalency of the lattice. The results suggest that interstitial dopant incorporation is a powerful method for modulating the transition temperature and electronic instabilities of VO2 and provides a facile approach for postsynthetic dopant incorporation to reach a switching temperature required for a specific application.

For solar energy conversion, not only must a semiconductor absorb incident solar radiation efficiently but also its photoexcited electron-hole pairs must further be separated and transported across interfaces. Charge transfer across interfaces requires consideration of both thermodynamic driving forces as well as the competing kinetics of multiple possible transfer, cooling, and recombination pathways. In this work, we demonstrate a novel strategy for extracting holes from photoexcited CdSe quantum dots (QDs) based on interfacing with β-Pb 0.33 V 2 O 5 nanowires that have strategically positioned mid-gap states derived from the intercalating Pb 2+ -ions. Unlike mid-gap states derived from defects or dopants, the states utilized here are derived from the intrinsic crystal structure and are thus homogeneously distributed across the material. CdSe/β-Pb 0.33 V 2 O 5 heterostructures were assembled using two distinct methods: successive ionic layer adsorption and reaction (SILAR) and linker-assisted assembly (LAA). Transient absorption spectroscopy measurements indicate that electrons and holes can be transferred from the photoexcited CdSe QDs to the conduction and mid-gap states, respectively, of β-Pb 0.33 V 2 O 5 nanowires for both types of heterostructures. Holes were transferred on time scales less than 1 ps, whereas electrons were transferred more slowly on time scales of approximately 2 ps. In contrast, for analogous heterostructures consisting of CdSe QDs interfaced with V 2 O 5 nanowires (wherein mid-gap states are absent), only electron transfer was observed. Interestingly, electron transfer was readily achieved for CdSe QDs interfaced with V 2 O 5 nanowires by the SILAR method; however, for interfaces incorporating molecular linkers, electron transfer was observed only upon excitation at energies substantially greater than the band-gap absorption threshold of CdSe. Transient absorbance decay traces reveal longer exciton lifetimes (1-3 µs) for CdSe/β-Pb 0.33 V 2 O 5 heterostructures relative to bare β-Pb 0.33 V 2 O 5 nanowires (0.2-0.6 µs); the difference is attributed to surface passivation of intrinsic surface defects in β-Pb 0.33 V 2 O 5 upon interfacing with CdSe (290 words).

Semiconductor heterostructures for solar energy conversion interface light-harvesting semiconductor nanoparticles with wide-band-gap semiconductors that serve as charge acceptors. In such heterostructures, the kinetics of charge separation depend on the thermodynamic driving force, which is dictated by energetic offsets across the interface. A recently developed promising platform interfaces semiconductor quantum dots (QDs) with ternary vanadium oxides that have characteristic midgap states situated between the valence and conduction bands. In this work, we have prepared CdS/β-Pb0.33V2O5 heterostructures by both linker-assisted assembly and surface precipitation and contrasted these materials with CdSe/β-Pb0.33V2O5 heterostructures prepared by the same methods. Increased valence-band (VB) edge onsets in X-ray photoelectron spectra for CdS/β-Pb0.33V2O5 heterostructures relative to CdSe/β-Pb0.33V2O5 heterostructures suggest a positive shift in the VB edge potential and, therefore, an increased driving force for the photoinduced transfer of holes to the midgap state of β-Pb0.33V2O5. This approach facilitates a ca. 0.40 eV decrease in the thermodynamic barrier for hole injection from the VB edge of QDs suggesting an important design parameter. Transient absorption spectroscopy experiments provide direct evidence of hole transfer from photoexcited CdS QDs to the midgap states of β-Pb0.33V2O5 NWs, along with electron transfer into the conduction band of the β-Pb0.33V2O5 NWs. Hole transfer is substantially faster and occurs at <1-ps time scales, whereas completion of electron transfer requires 530 ps depending on the nature of the interface. The differentiated time scales of electron and hole transfer, which are furthermore tunable as a function of the mode of attachment of QDs to NWs, provide a vital design tool for designing architectures for solar energy conversion. More generally, the approach developed here suggests that interfacing semiconductor QDs with transition-metal oxide NWs exhibiting intercalative midgap states yields a versatile platform wherein the thermodynamics and kinetics of charge transfer can be systematically modulated to improve the efficiency of charge separation across interfaces.

Buildings consume an inordinate amount of energy, accounting for 30-40% of worldwide energy consumption. A major portion of solar radiation is transmitted directly to building interiors through windows, skylights, and glazed doors where the resulting solar heat gain necessitates increased use of air conditioning. Current technologies aimed at addressing this problem suffer from major drawbacks, including a reduction in the transmission of visible light, thereby resulting in increased use of artificial lighting. Since currently used coatings are temperature-invariant in terms of their solar heat gain modulation, they are unable to offset cold-weather heating costs that would otherwise have resulted from solar heat gain. There is considerable interest in the development of plastic fenestration elements that can dynamically modulate solar heat gain based on the external climate and are retrofittable onto existing structures. The metal-insulator transition of VO is accompanied by a pronounced modulation of near-infrared transmittance as a function of temperature and can potentially be harnessed for this purpose. Here, we demonstrate that a nanocomposite thin film embedded with well dispersed sub-100-nm diameter VO nanocrystals exhibits a combination of high visible light transmittance, effective near-infrared suppression, and onset of NIR modulation at wavelengths <800 nm. In our approach, hydrothermally grown VO nanocrystals with <100 nm diameters are dispersed within a methacrylic acid/ethyl acrylate copolymer after either (i) grafting of silanes to constitute an amorphous SiO shell or (ii) surface functionalization with perfluorinated silanes and the use of a perfluorooctanesulfonate surfactant. Homogeneous and high optical quality thin films are cast from aqueous dispersions of the pH-sensitive nanocomposites onto glass. An entirely aqueous-phase process for preparation of nanocrystals and their effective dispersion within polymeric nanocomposites allows for realization of scalable and viable plastic fenestration elements.

Fenestration elements that enable spectrally selective dynamic modulation of the near-infrared region of the electromagnetic spectrum are of great interest as a means of decreasing the energy consumption of buildings by adjusting solar heat gain in response to external temperature. The binary vanadium oxide VO 2 exhibits a near-room-temperature insulator–metal electronic transition accompanied by a dramatic modulation of the near-infrared transmittance. The low-temperature insulating phase is infrared transparent but blocks infrared transmission upon metallization. There is considerable interest in harnessing the thermochromic modulation afforded by VO 2 in nanocomposite thin films. However, to prepare a viable thermochromic film, the visible-light transmittance must be maintained as high as possible while maximizing thermochromic modulation in the near-infrared region of the electromagnetic spectrum, which necessitates the development of high-crystalline-quality VO 2 nanocrystals of the optimal particle size embedded within the appropriate host matrix and refractive index matched to the host medium. Here, we demonstrate the preparation of acrylate-based nanocomposite thin films with varying sizes of embedded VO 2 nanoparticles. The observed strong size dependence of visible-light transmittance and near-infrared modulation is explicable on the basis of optical simulations. In this article, we elucidate multiple scattering and absorption mechanisms, including Mie scattering, temperature-/phase-variant refractive-index mismatch between VO 2 nanocrystals and the encapsulating matrix, and the appearance of a surface plasmon resonance using temperature-variant absorptance and diffuse transmittance spectroscopy measurements performed as a function of particle loading for the different sizes of VO 2 nanocrystals. Nanocrystals with dimensions of 44 ± 30 nm show up to >32% near-infrared energy modulation across the near-infrared region of the electromagnetic spectrum while maintaining high visible-light transmission. The results presented here, providing mechanistic elucidation of the size dependence of the different scattering mechanisms, underscore the importance of nanocrystallite dimensions, refractive-index matching, and individualized dispersion of particles within the host matrix for the preparation of viable thermochromic thin films mitigating Mie scattering and differential refractive-index scattering.

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