Atomic layer deposition (ALD) is a cyclic process which relies on sequential self-terminating reactions between gas phase precursor molecules and a solid surface. The self-limiting nature of the chemical reactions ensures precise film thickness control and excellent step coverage, even on 3D structures with large aspect ratios. At present, ALD is mainly used in the microelectronics industry, e.g. for growing gate oxides. The excellent conformality that can be achieved with ALD also renders it a promising candidate for coating porous structures, e.g. for functionalization of large surface area substrates for catalysis, fuel cells, batteries, supercapacitors, filtration devices, sensors, membranes etc. This tutorial review focuses on the application of ALD for catalyst design. Examples are discussed where ALD of TiO(2) is used for tailoring the interior surface of nanoporous films with pore sizes of 4-6 nm, resulting in photocatalytic activity. In still narrower pores, the ability to deposit chemical elements can be exploited to generate catalytic sites. In zeolites, ALD of aluminium species enables the generation of acid catalytic activity.

In this study, we investigated phase separation and long-range atomic ordering phenomena in InGaN alloys produced by molecular beam epitaxy. Films grown at substrate temperatures of 700-750°C with indium concentration higher than 35% showed phase separation, in good agreement with thermodynamic predictions for spinodal decomposition. Films grown at lower substrate temperatures ͑650-675°C͒ revealed compositional inhomogeneity when the indium content was larger than 25%. These films, upon annealing to 725°C, underwent phase separation, similar to those grown at the same temperature. The InGaN films also exhibited long-range atomic ordering. The ordering parameter was found to increase with the growth rate of the films, consistent with the notion that ordering is induced at the growth surface. The ordered phase was found to be stable up to annealing temperatures of 725°C. A competition between ordering and phase separation has been observed, suggesting that the driving force for both phenomena is lattice strain in the alloy.

The formation of self-organized Si nanostructures induced by Mo seeding during normal incidence Ar+ ion bombardment at room temperature is reported. Silicon surfaces without Mo seeding develop only power-law roughness during 1000eV ion bombardment at normal incidence, in agreement with scaling theory expectations of surface roughening. However, supplying Mo atoms to the surface during ion bombardment seeds the development of highly correlated, nanoscale structures (“dots”) that are typically 3nm high with a spatial wavelength of approximately 30nm. With time, these saturate and further surface roughening is dominated by the growth of long-wavelength corrugations.

The availability of ultrafast pulses of coherent hard x-rays from the Linac Coherent Light Source opens new opportunities for studies of atomic-scale dynamics in amorphous materials. Here we show that single ultrafast coherent x-ray pulses can be used to observe the speckle contrast in the high-angle diffraction from liquid Ga and glassy Ni2Pd2P and B2O3. We determine the thresholds above which the x-ray pulses disturb the atomic arrangements. Furthermore, high contrast speckle is observed in scattering patterns from the glasses integrated over many pulses, demonstrating that the source and optics are sufficiently stable for x-ray photon correlation spectroscopy studies of dynamics over a wide range of time scales.

We show that the ''sputter patterning'' topographical instability is determined by the effects of ion impact-induced prompt atomic redistribution and that erosion-the consensus predominant cause-is essentially irrelevant. We use grazing incidence small angle x-ray scattering to measure in situ the damping of noise or its amplification into patterns via the linear dispersion relation. A model based on the effects of impact-induced redistribution of those atoms that are not sputtered away explains both the observed ultrasmoothening at low angles from normal incidence and the instability at higher angles.