Van der Waals coupling is emerging as a powerful method to engineer physical properties of atomically thin two-dimensional materials. In coupled graphene-graphene and graphene-boron nitride layers, interesting physical phenomena ranging from Fermi velocity renormalization to Hofstadter's butterfly pattern have been demonstrated. Atomically thin transition metal dichalcogenides, another family of two-dimensional-layered semiconductors, can show distinct coupling phenomena. Here we demonstrate the evolution of interlayer coupling with twist angles in as-grown molybdenum disulfide bilayers. We find that the indirect bandgap size varies appreciably with the stacking configuration: it shows the largest redshift for AA-and AB-stacked bilayers, and a significantly smaller but constant redshift for all other twist angles. Our observations, together with ab initio calculations, reveal that this evolution of interlayer coupling originates from the repulsive steric effects that leads to different interlayer separations between the two molybdenum disulfide layers in different stacking configurations.

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Large scale epitaxial growth and transfer of monolayer MoS has attracted great attention in recent years. Here, we report the wafer-scale epitaxial growth of highly oriented continuous and uniform monolayer MoS films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method. The epitaxial film is of high quality and stitched by many 0°, 60° domains and 60°-domain boundaries. Moreover, such wafer-scale monolayer MoS films can be transferred and stacked by a simple stamp-transfer process, and the substrate is reusable for subsequent growth. Our progress would facilitate the scalable fabrication of various electronic, valleytronic, and optoelectronic devices for practical applications.

A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 minutes, of a graphene film of 5 50 cm 2 dimension with > 99% ultra-highly oriented grains. This growth was achieved by: (i) synthesis of sub-metre-sized single-crystal Cu (111) foil as substrate; (ii) epitaxial growth of graphene islands on the Cu(111) surface; (iii) seamless merging of such graphene islands into a graphene film with high single crystallinity and (iv) the ultrafast growth of graphene film. These achievements were realized by a temperature-driven annealing technique to produce single-crystal Cu(111) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ~ 23,000 cm 2 V -1 s -1 at 4 K and room temperature sheet resistance of ~ 230 □ ⁄ . It is very likely that this approach can be scaled up to achieve exceptionally large and highquality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.

Ionic transport in organometal halide perovskites is of vital importance because it dominates anomalous phenomena in perovskite solar cells, from hysteresis to switchable photovoltaic effects. However, excited state ionic transport under illumination has remained elusive, although it is essential for understanding the unusual light-induced effects (light-induced self-poling, photo-induced halide segregation and slow photoconductivity response) in organometal halide perovskites for optoelectronic applications. Here, we quantitatively demonstrate light-enhanced ionic transport in CH3NH3PbI3 over a wide temperature range of 17–295 K, which reveals a reduction in ionic transport activation energy by approximately a factor of five (from 0.82 to 0.15 eV) under illumination. The pure ionic conductance is obtained by separating it from the electronic contribution in cryogenic galvanostatic and voltage-current measurements. On the basis of these findings, we design a novel light-assisted method of catalyzing ionic interdiffusion between CH3NH3I and PbI2 stacking layers in sequential deposition perovskite synthesis. X-ray diffraction patterns indicate a significant reduction of PbI2 residue in the optimized CH3NH3PbI3 thin film produced via light-assisted sequential deposition, and the resulting solar cell efficiency is increased by over 100% (7.5%–15.7%) with little PbI2 residue. This new method enables fine control of the reaction depth in perovskite synthesis and, in turn, supports light-enhanced ionic transport.

Two-dimensional (2D) layered hybrid perovskites of (RNH)PbX (R is an alkyl and X is a halide) have been recently synthesized and exhibited rich optical properties including fluorescence and exciton effects. However, few studies on transport and optoelectronic measurements of individual 2D perovskite crystals have been reported, presumably owing to the instability issue during electronic device fabrications. Here we report the first photodetector based on individual 2D (CHNH)PbBr perovskite crystals, built with the protection and top contact of graphene film. Both a high responsivity (∼2100 A/W) and extremely low dark current (∼10 A) are achieved with a design of interdigital graphene electrodes. Our study paves the way to build high-performance optoelectronic devices based on the emerging 2D single-crystal perovskite materials.

Graphene has a range of unique physical properties and could be of use in the development of a variety of electronic, photonic and photovoltaic devices. For most applications, large-area high-quality graphene films are required and chemical vapour deposition (CVD) synthesis of graphene on copper surfaces has been of particular interest due to its simplicity and cost effectiveness. However, the rates of growth for graphene by CVD on copper are less than 0.4 μm s, and therefore the synthesis of large, single-crystal graphene domains takes at least a few hours. Here, we show that single-crystal graphene can be grown on copper foils with a growth rate of 60 μm s. Our high growth rate is achieved by placing the copper foil above an oxide substrate with a gap of ∼15 μm between them. The oxide substrate provides a continuous supply of oxygen to the surface of the copper catalyst during the CVD growth, which significantly lowers the energy barrier to the decomposition of the carbon feedstock and increases the growth rate. With this approach, we are able to grow single-crystal graphene domains with a lateral size of 0.3 mm in just 5 s.

Electron-electron interactions are significantly enhanced in one-dimensional systems, and single-walled carbon nanotubes provide a unique opportunity for studying such interactions and the related many-body effects in one dimension. However, single-walled nanotubes can have a wide range of diameters and hundreds of different structures, each defined by its chiral index (n,m), where n and m are integers that can have values from zero up to 30 or more. Moreover, one-third of these structures are metals and two-thirds are semiconductors, and they display optical resonances at many different frequencies. Systematic studies of many-body effects in nanotubes would therefore benefit from the availability of a technique for identifying the chiral index of a nanotube based on a measurement of its optical resonances, and vice versa. Here, we report the establishment of a structure-property 'atlas' for nanotube optical transitions based on simultaneous electron diffraction measurements of the chiral index and Rayleigh scattering measurements of the optical resonances of 206 different single-walled nanotube structures. The nanotubes, which were suspended across open slit structures on silicon substrates, had diameters in the range 1.3-4.7 nm. We also use this atlas as a starting point for a systematic study of many-body effects in the excited states of single-walled nanotubes. We find that electron-electron interactions shift the optical resonance energies by the same amount for both metallic and semiconducting nanotubes, and that this shift (which corresponds to an effective Fermi velocity renormalization) increases monotonically with nanotube diameter. This behaviour arises from two sources: an intriguing cancellation of long-range electron-electron interaction effects, and the dependence of short-range electron-electron interactions on diameter.