Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

Abstract

A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 minutes, of a graphene film of 5 50 cm 2 dimension with > 99% ultra-highly oriented grains. This growth was achieved by: (i) synthesis of sub-metre-sized single-crystal Cu (111) foil as substrate; (ii) epitaxial growth of graphene islands on the Cu(111) surface; (iii) seamless merging of such graphene islands into a graphene film with high single crystallinity and (iv) the ultrafast growth of graphene film. These achievements were realized by a temperature-driven annealing technique to produce single-crystal Cu(111) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ~ 23,000 cm 2 V -1 s -1 at 4 K and room temperature sheet resistance of ~ 230 □ ⁄ . It is very likely that this approach can be scaled up to achieve exceptionally large and highquality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.

Near‐Field Characterization of Graphene Plasmons by Photo‐Induced Force Microscopy

“…Figure c shows the Raman spectrum of the transferred graphene on top of the grating. The graphene used in this work is grown by chemical vapor deposition (CVD) method . The G and 2D peaks of the Raman shift are located at 1582 cm −1 and 2668 cm −1 , respectively.…”

Vapor‐phase growth of high‐quality wafer‐scale two‐dimensional materials

“…Many efforts have demonstrated that the pretreatment of the substrates (such as long‐time annealing, polishing, resolidification, etc.) can effectively decrease the number of active sites . However, these methods have some weaknesses.…”

“…A straightforward route is to grow up from a single seed, which is similar to silicon ingot growth . Another thoroughgoing approach is to make the multinucleation domains with identical orientation seamless coalesce into a wafer‐scale single‐crystal film, which can usually be achieved on a single‐crystal substrate or liquid substrate . The third effective one is the evolutionary selection growth (ESG) that can eliminate the formation of undesired seeds to get large‐area single‐crystal 2D materials, even on a polycrystalline substrate .…”

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

“…Significant progress has been made in 2D crystal growth [1][2][3], and monolayer graphene crystals beyond the cm-scale [4] and continuous films over areas just limited by the growth reactor geometry [5][6][7] are now routinely achieved by chemical vapour deposition (CVD). The graphene CVD process utilises a catalytic substrate to achieve high crystallinity [2,[8][9][10] and for the majority of emerging applications the graphene has to be released from this parent growth substrate and transferred into the device stack.…”