2014
DOI: 10.1038/ncomms5966
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Abstract: Van der Waals coupling is emerging as a powerful method to engineer physical properties of atomically thin two-dimensional materials. In coupled graphene-graphene and graphene-boron nitride layers, interesting physical phenomena ranging from Fermi velocity renormalization to Hofstadter's butterfly pattern have been demonstrated. Atomically thin transition metal dichalcogenides, another family of two-dimensional-layered semiconductors, can show distinct coupling phenomena. Here we demonstrate the evolution of i… Show more

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Cited by 566 publications
(767 citation statements)
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“…It has been suggested that the indirect band gap being an indicator of the interlayer electronic coupling strength with lower the indirect band gap, which correlates to a higher coupling strength. 21 Our PL results indicate stronger VOL. XXX ' NO.…”
Section: Resultsmentioning
confidence: 62%
See 1 more Smart Citation
“…It has been suggested that the indirect band gap being an indicator of the interlayer electronic coupling strength with lower the indirect band gap, which correlates to a higher coupling strength. 21 Our PL results indicate stronger VOL. XXX ' NO.…”
Section: Resultsmentioning
confidence: 62%
“…This observation agrees with the density functional theory (DFT) calculation findings of He et al 9 in terms of the general trend but being different in value (0.06 eV from our PL study versus 0.14 eV from DFT calculations). Previous experimental results 19,21 did not address the difference between the I peak positions of AA 0 and AB stacked bilayer MoS 2 . In addition, the I/A peak intensity ratio in PL spectra obtained on a Au pyramid region is higher than that in the previous experiment results obtained on SiO 2 /Si substrates.…”
Section: Resultsmentioning
confidence: 87%
“…It is worth noting that our results show that the A' 1 and E' peak energies of MoS2 do not seem to depend on the stacking angle between the two layers as shown in Figure S4, which is different from the recent studies on Raman spectra of bilayer MoS2 which shows twisting angle dependence. 46,47 This could be reasoned since the homo-bilayer might exhibit stronger interlayer coupling due to the same lattice constant for two layers (better matching between top and bottom layers).…”
Section: Resultsmentioning
confidence: 99%
“…Theoretical calculations have predicted that the stacking sequence in bi-layer MoS 2 plays an important role in its electronic band structure [14]. Experimental studies have found that the relative rotation angle in bi-layer MoS 2 significantly modifies the direct/indirect band gap and interlayer coupling [15,16]. The recently observed spin/valley polarization in symmetry-breaking 3R phase bulk MoS 2 (another commonly observed phase of bulk MoS 2 ) further elucidates the key role of stacking sequences (or crystal structure) in the properties of layered MoS 2 [17].…”
Section: Introductionmentioning
confidence: 99%