PACS 78.55. 81.05.Dz, 82.80.Pv, 85.60.Jb ZnO films were fabricated by spin coating. The photoluminescence (PL) spectra of the films, which included a near-band-edge emission, were observed at RT. The estimated external quantum efficiency of their PL is approximately 1.2%. Electroluminescent devices (ELDs) using the ZnO films were also fabricated. The violet light emission was observed from the devices. The results indicate that the spin-coated ZnO films have high potential for application to UV light-emitting devices. In this study, the spin-coating fabrication of ZnO films deposited on tantalum oxide (Ta 2 O 5 ) insulators (thickness: 150 nm), which were coated on Si substrates, is reported. The photoluminescence (PL) spectra of these ZnO films were observed at RT and their emission efficiency was estimated. Electroluminescence devices (ELDs) were also fabricated using the ZnO films. Finally, the possibility of spin-coated ZnO films for application to light-emitting devices is discussed.
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