ZnO films fabricated by spin coating and their application to UV electroluminescent devices

Abstract

PACS 78.55. 81.05.Dz, 82.80.Pv, 85.60.Jb ZnO films were fabricated by spin coating. The photoluminescence (PL) spectra of the films, which included a near-band-edge emission, were observed at RT. The estimated external quantum efficiency of their PL is approximately 1.2%. Electroluminescent devices (ELDs) using the ZnO films were also fabricated. The violet light emission was observed from the devices. The results indicate that the spin-coated ZnO films have high potential for application to UV light-emitting devices. In this study, the spin-coating fabrication of ZnO films deposited on tantalum oxide (Ta 2 O 5 ) insulators (thickness: 150 nm), which were coated on Si substrates, is reported. The photoluminescence (PL) spectra of these ZnO films were observed at RT and their emission efficiency was estimated. Electroluminescence devices (ELDs) were also fabricated using the ZnO films. Finally, the possibility of spin-coated ZnO films for application to light-emitting devices is discussed.

Synthesis of composite films for ZnO-based memristors with superior stability

“…ZnO films can be prepared by traditional methods such as magnetron sputtering [24], vacuum thermal evaporation [25], sol-gel method [26], chemical vapour deposition [27], pulsed laser deposition [28] and spin coating [29]. The latter method is a cost-effective and user-friendly option, offering a broad range of film options.…”

Fabrication of MgZnO films by molecular precursor method and their application to UV‐transparent electrodes

“…The ZnO-based transparent electrode is one such candidate for a near UV spectral region [1]. The molecular precursor method (MPM) is a spin-coating technique [2] that is suitable for the cost-effective fabrication of those electrodes [3]. Metal-organic complexes are used for the starting materials for MPM.…”