Fabrication of GaN‐based Schottky‐type light‐emitting diodes for micropixels in flat‐panel displays

Abstract

Microsize integrated light‐emitting diodes (LEDs) that operate in the UV spectral region were fabricated using GaN layers grown on sapphire substrates by metal‐organic vapor phase epitaxy (MOVPE). Schottky‐type (ST) and metal‐oxide‐semiconductor (MOS) LEDs were realized. The near‐band‐edge emission of GaN was observed in the electroluminescent spectra with reversed bias under pulsed‐voltage conditions. The insertion of an aluminum oxide layer in the GaN‐based LED led to an increase in electroluminescent intensity. The internal optical absorption in the GaN layer of the GaN‐based ST‐LEDs was also estimated to be 75% of the emission light power. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

“…GaN has a direct wide bandgap of 3.4 eV. GaN has superior electronic properties, such as low electron affinity (2.7-3.3 eV), high melting point (2600 K), and small work function (4.1 eV) [32], which are of great performance for field emission (FE) devices such as cold cathode emitters and flat panel display [33]. GaN based devices are highly suitable for high frequency, high power, and high temperature electronics applications [34].…”