A line shape analysis of free-exciton low-temperature (4.2 K) photoluminescence spectra is applied to monitor the heating of Si samples due to an exciting Arf-ion laser beam. The heating is studied in dependence on the laser beam intensity. The temperature as a line shape fitting parameter can be established within ho.15 K. Continuous minor increase of the sample temperature is observed up to an intensity of-200 W cmm2, followed by an abrupt temperature jump up to tens of K. Possible inaccuracies, resulting from the heating, in photoluminescent quantitative determination of boron, phosphorus, and aluminum are discussed.
Makyoh, the magic mirror method, h a s proven to be one of only a few production-worthy surface characterisation tools. This technique, very simple and non-destructive, transforms latent damage, scratches, waviness and other flaws on mirror-like surfaces into visual images. It has recently been used to characterise highly finished, mirror-polished, large-diameter Si wafers for ultralarge-scale integration (ULSI) applications and Ill-V compound semiconductor wafers, replacing the laborious, unstable, naked-eye wafer inspection lines. Our studies have shown that the technique is also very useful for optimising various wafering processes and monitoring various process steps required to manufacture advanced substrate structures such as silicon-on-insulator, silicon-germanium alloy-on-silicon, etc for future devices. It has been successfully applied to characterise various Si wafers used in ULSI applica!ions with the highest finish. This paper describes the recent development of the method, reviewing some of the results obtained in the evaluation of mirror-polished Si and compound semiconductor wafers and of complex substrate structures for ULSI device fabrication processes.
The room temperature refractive and extinction indexes of intrinsic Si are determined in the wavenumber range 300 to 4000 cm-l from transmittance spectra and Kramers-Kronig relations. Simultaneous transmittance and reflectance measurements are shown to be not suitable for the purpose. The regions of localized modes of carbon and oxygen impurities are analyzed in detail and the optical constants are approximated by simple analytic functions. Die Brechungs-und Absorptions-Indices von undotierten Silizium-Einkristallen werden im Spektralbereich von 300 bis 4000 cm-l be1 Zimmertemperatur aus Transmissionsspektren und Kramers-Kronig-Analyse bestimmt. Es wird gefunden, daS gleichzeitige Messung von Reflexions-und Transmissionsdaten fur diesen Zweck ungeeignet ist. Bereiche der lokalisierten Schwingungen von Kohlenstoff-und Sauerstoff-Storstcllenatome werden ausfuhrlich untersucht und einfache analytische Naherungen der optischen Konstanten in diesem Interval1 gegeben.
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