No abstract

A line shape analysis of free-exciton low-temperature (4.2 K) photoluminescence spectra is applied to monitor the heating of Si samples due to an exciting Arf-ion laser beam. The heating is studied in dependence on the laser beam intensity. The temperature as a line shape fitting parameter can be established within ho.15 K. Continuous minor increase of the sample temperature is observed up to an intensity of-200 W cmm2, followed by an abrupt temperature jump up to tens of K. Possible inaccuracies, resulting from the heating, in photoluminescent quantitative determination of boron, phosphorus, and aluminum are discussed.

No abstract

No abstract