Infrared optical constants of intrinsic silicon

Abstract

The room temperature refractive and extinction indexes of intrinsic Si are determined in the wavenumber range 300 to 4000 cm-l from transmittance spectra and Kramers-Kronig relations. Simultaneous transmittance and reflectance measurements are shown to be not suitable for the purpose. The regions of localized modes of carbon and oxygen impurities are analyzed in detail and the optical constants are approximated by simple analytic functions. Die Brechungs-und Absorptions-Indices von undotierten Silizium-Einkristallen werden im Spektralbereich von 300 bis 4000 cm-l be1 Zimmertemperatur aus Transmissionsspektren und Kramers-Kronig-Analyse bestimmt. Es wird gefunden, daS gleichzeitige Messung von Reflexions-und Transmissionsdaten fur diesen Zweck ungeeignet ist. Bereiche der lokalisierten Schwingungen von Kohlenstoff-und Sauerstoff-Storstcllenatome werden ausfuhrlich untersucht und einfache analytische Naherungen der optischen Konstanten in diesem Interval1 gegeben.

Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers

“…Index of refraction for silicon crystal was calculated according to Ref. [11] as used byŠtoudek et al [7].…”

Vibrational Modes in SixGe1-xAlloys: Temperature and Compositional Dependence

“…, s u p e r p o s e d o n a t w o -p h o n o n b a c k g r o u n d ; t h e o v e r l a p p i n g s t r u c t u r e s were studied earlier in pure Si [4]. Note that the reference Si spectrum of Fig.…”

“…Transmittance spectra have been measured with a FTIR spectrometer Bruker IFS55, the spectral resolution was 1 cm -1 and a number of scans was typically about 100. The transmission Τ of an optically thick slab of thickness d is [4] where K = 4πνk is the absorption coefficient and R = [(n -1) is the reflectivity of a semi-infinite sample with complex refractive index n+ik; n is the real part of the refractive index and k is the extinction coefficient. The approximations are valid for n » k. The real part of the refractive index of the Si x Ge 1 -x alloy has been computed by (899) …”

“…Transmittance spectra have been measured with a FTIR spectrometer Bruker IFS55, the spectral resolution was 1 cm -1 and a number of scans was typically about 100. The transmission Τ of an optically thick slab of thickness d is [4] where K = 4πνk is the absorption coefficient and R = [(n -1) …”

“…Transmittance spectra have been measured with a FTIR spectrometer Bruker IFS55, the spectral resolution was 1 cm -1 and a number of scans was typically about 100. The transmission Τ of an optically thick slab of thickness d is [4] where K = 4πνk is the absorption coefficient and using the formula n = n 0 + n 1ν2, where n0(x) = 4.01 -0.81x + 0.22x 2 and n1(x) = (0.141-0.137x + 0.058x2)10-8 cm2 [5]. Our samples were nominally intrinsic; the free carrier concentration at room temperature was typically below 10 15 cm-3 .…”