No abstract

Silicon layer transfer by hydrogen implantation combined with wafer bonding in ultrahigh vacuumRoom-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation

No abstract

No abstract

The electron microscope determination (high resolution HREM and conventional diffraction contrast TEM) of the structure (geometry, size, shape, etc.) of nm‐scale objects is of great interest for the creation of novel semiconducting materials of reduced dimensions as, e.g., quantum dots (QDs) and quantum wires. HREM contrast simulations based on molecular dynamics structure modelling are applied to check the visualization of coherently strained nm‐scale InAs islands embedded in a GaAs matrix. Being of pyramidal shape, InAs islands always seem to be truncated owing to lower In content on top of the pyramid and to the high level of strains around the island. Optimum imaging conditions are analysed to reveal shape and size of such objects.