Self-propagating room-temperature silicon wafer bonding in ultrahigh vacuum

Gösele, U.; Stenzel, H.; Martini, T.; Steinkirchner, J.; Conrad, D.; Scheerschmidt, K.

doi:10.1063/1.115335

Cited by 117 publications

(78 citation statements)

References 5 publications

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“…6 Alternatively, several vacuum wafer bonding methods have been reported for achieving reliable bonding even at room temperature, such as surface activated bonding, 7 and ultra-high vacuum bonding. 8 They are capable of room-temperature bonding without annealing but the whole bonding process requires high-vacuum condition (<10 À5 Pa) that makes these processes expensive and less applicable for mass production. It thus seems very attractive to develop a wafer bonding method enabling (i) reliable bonding at room temperature without requiring annealing step, (ii) void-free at bonding interfaces, (iii) low-cost without requiring highvacuum system, and (iv) facile treatment step prior to bonding.…”

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confidence: 99%

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Wang

Suga

2011

J. Electrochem. Soc.

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Room-temperature Si/Si wafer direct bonding has been achieved successfully without wet chemistry treatment as well as no requiring annealing. Very strong bonding strength of Si/Si pairs, close to the bulk-fracture strength of silicon, is demonstrated at room temperature thanks to adding small amount of carbon tetrafluoride (CF 4 ) into oxygen plasma treatment. The surface energies of bonded Si/Si wafer pairs were influenced by plasma treatment parameters. Moreover, the wafer surfaces and the bonding interfaces are analyzed to explore the bonding mechanism. Adding small amount of CF 4 into O 2 plasma does not etch the Si surface in a short time ($60 s), but it renders fluorinated oxide grown on the Si surface, which should be less hydrophilic than the surface treated by O 2 plasma. Therefore, fewer water molecules at bonding interface may be prone to produce many covalent bonds via polymerization reaction and result in strong bonding at room temperature.

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confidence: 99%

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Wang

Suga

2011

J. Electrochem. Soc.

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“…Several bonding techniques are available and we highlight eutectic and direct bonding as the most suitable methods due to their low outgassing and high hermeticity, with anodic bonding as a suitable alternative if the oxygen released during bonding can be pumped away. Lowering the temperatures of these bonding techniques should be investigated as they can reduce the outgassing limitations by two or three orders of magnitude 171,174,175,181,[243][244][245][246][247][248] .…”

Section: E Vacuum Discussionmentioning

confidence: 99%

“…Moreover, thin films, such as gold on silicon, can diffuse at moderate temperatures if additional barrier layers are not used 170 . In these situations one must use lower temperature degassing, such as UV desorption or plasma cleaning, and also develop lower temperature bonding methods 171,174,175,181,[243][244][245][246][247][248] .…”

Section: Discussionmentioning

confidence: 99%

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

Rushton

Aldous

Himsworth

2014

Review of Scientific Instruments

104

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Experiments using laser cooled atoms and ions show real promise for practical applications in quantumenhanced metrology, timing, navigation, and sensing as well as exotic roles in quantum computing, networking and simulation. The heart of many of these experiments has been translated to microfabricated platforms known as atom chips whose construction readily lend themselves to integration with larger systems and future mass production. To truly make the jump from laboratory demonstrations to practical, rugged devices, the complex surrounding infrastructure (including vacuum systems, optics, and lasers) also needs to be miniaturized and integrated. In this paper we explore the feasibility of applying this approach to the Magneto-Optical Trap; incorporating the vacuum system, atom source and optical geometry into a permanently sealed microlitre system capable of maintaining 10 −10 mbar for more than 1000 days of operation with passive pumping alone. We demonstrate such an engineering challenge is achievable using recent advances in semiconductor microfabrication techniques and materials.PACS numbers: 07.07.Df, 37.10.Gh, 07.30.Kf, I. ULTRACOLD QUANTUM TECHNOLOGYSince the first demonstrations of atoms and ions at sub-millikelvin temperatures in the mid-1980s, the field of atomic physics has been revolutionized by laser cooling and trapping as it provides researchers with a method to probe some of the purest and sensitive quantum systems available. This field is still highly productive and recently has put significant emphasis on the practical applications of this technology beyond the laboratory 1,2 . It was evident very early on that ultracold matter would be an indispensable tool in precise timing applications and a recent demonstration 3 has shown extremely low instabilities at the 10 −18 level. The wavelike nature of atoms as they are cooled to lower temperatures can be used to form atomic interferometers that outperform optical counterparts in measurements of accelerated reference frames 4-7 , which are important for inertial guidance systems, but can also provide sensitive measurements of mass, charge and magnetic fields [8][9][10][11] . Greater sensitivity beyond the classical limit is possible via squeezed 12 and entangled states 13-15 , which are also fundamental attributes for quantum computing 16,17 , and long distance quantum networking 18 . Ultracold matter has been used in the emerging field of quantum simulation 19 and is an indispensable tool in determining fundamental constants 20 , testing general relativity 21 and defining measurement standards 22 . Many researchers and industries believe such tools will be a major part of the 'second quantum revolution' in which the more 'exotic' properties of quantum physics are applied for practical applications 23,24 .The field of ultracold matter has reached a matua) m.d.himsworth@soton.ac.uk rity in both experimental methods and theoretical understanding allowing experiments to begin leaving the laboratory 25-27 . These systems are bespoke, rarely take up a ...

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“…However, integration of the dielectrics in ULSI chips requires thermal stability at temperatures of at least 400°C. Diamondlike carbon (DLC) has been considered a possible low k dielectric, but the films have either been found not to be stable above 350°C, [2][3][4] or have dielectric constants of about six. 5 Matsubara et al have demonstrated the integration feasibility of fluorine containing DLC (FDLC) films in a multilevel structure using Al metallization, but only at temperatures below 350°C.…”

Section: Introductionmentioning

confidence: 99%

“…To date, very little has been done on this subject.3 Room temperature bonding of silicon at a pressure of l0 Torr has been reported by Gosele et al 3 In that work the surfaces were prepared by heating of the samples at a pressure of iO Torr, and a good bond was achieved as judged from a tunneling electron microscope (TEM) image. However, to prepare and maintain atomically clean surfaces for reasonable lengths of time, typical UHV pressures of lOb0 Ton are required.…”

mentioning

confidence: 99%

Ultraclean Si/Si Interface Formation by Surface Preparation and Direct Bonding in Ultrahigh Vacuum

Hermansson

Grey

Bengtsson

et al. 1998

J. Electrochem. Soc.

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Silicon surfaces have been cleaned and bonded in ultrahigh vacuum, at a pressure in the 10'° Torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface by spreading resistance and current vs. temperature measurements. This suggests that the barrier is caused by inevitable dislocation networks due to wafer misorientation, as well as residual oxygen at the interface.

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Self-propagating room-temperature silicon wafer bonding in ultrahigh vacuum

Abstract: Silicon layer transfer by hydrogen implantation combined with wafer bonding in ultrahigh vacuumRoom-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation

Cited by 117 publications

References 5 publications

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

Ultraclean Si/Si Interface Formation by Surface Preparation and Direct Bonding in Ultrahigh Vacuum

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