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Dynamic state switching in nonlinear multiferroic cantilevers Appl. Phys. Lett. 101, 043506 (2012) Nanomagnetism of cobalt ferrite-based spin filters probed by spin-polarized tunneling Appl. Phys. Lett. 101, 042409 (2012) Magnetic Schottky diode exploiting spin polarized transport in Co/p-Si heterostructure Appl. Phys. Lett. 100, 262402 (2012) Concepts and steps for the realization of a new domain wall based giant magnetoresistance nanowire device: From the available 24 multiturn counter to a 212 turn counter Exchange biased magnetic tunnel junction ͑MTJ͒ structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. MTJ elements have been developed which exhibit very large magnetoresistive ͑MR͒ values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ϳ60 ⍀͑m͒ 2 , and with MR values enhanced by moderate thermal treatments. Large MR values are observed in magnetic elements with areas as small as 0.17 ͑m͒ 2 . The magnetic field dependent current-voltage characteristics of an MTJ element integrated with a silicon diode are analyzed to extract the MR properties of the MTJ element itself.