Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy

Aetukuri, Nagaphani; Gray, A. X.; Drouard, Marc; Cossale, Matteo; Gao, Li; Reid, Alexander H.; Kukreja, Roopali; Ohldag, Hendrik; Jenkins, Catherine; Arenholz, Elke; Roche, K. P.; Dürr, H. A.; Samant, Mahesh G.; Parkin, Stuart S. P.

doi:10.1038/nphys2733

Cited by 485 publications

(512 citation statements)

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“…Recent examples of such strain-functionality coupling include the control of metal-to-insulator transition temperature in VO2 5 and the insulator-tosuperconductor transition temperature in La1.9Sr0.1CuO4 6 . Going beyond the ability to effectively manipulate already existing physical properties of a given material, strain has also been shown to invoke entirely new exotic ground states such as ferroelectricity in SrTiO3 and increased ferroelectric polarization in BaTiO3, consistent with theoretical predictions [7][8][9] .…”

Section: Textmentioning

confidence: 99%

Strain-Engineered Oxygen Vacancies in CaMnO₃ Thin Films

et al. 2017

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We demonstrate a novel pathway to control and stabilize oxygen vacancies in complex transition-metal oxide thin films. Using atomic layer-by-layer pulsed laser deposition (PLD) from two separate targets, we synthesize high-quality singlecrystalline CaMnO 3 films with systematically varying oxygen vacancy defect formation energies as controlled by coherent tensile strain. The systematic increase of the oxygen vacancy content in CaMnO 3 as a function of applied in-plane strain is observed and confirmed experimentally using high-resolution soft X-ray absorption spectroscopy (XAS) in conjunction with bulk-sensitive hard X-ray photoemission spectroscopy (HAXPES). The relevant defect states in the densities of states are identified and the vacancy content in the films quantified using the combination of first-principles theory and core−hole multiplet calculations with holistic fitting. Our findings open up a promising avenue for designing and controlling new ionically active properties and functionalities of complex transition-metal oxides via strain-induced oxygen-vacancy formation and ordering.

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Section: Textmentioning

confidence: 99%

Strain-Engineered Oxygen Vacancies in CaMnO₃ Thin Films

et al. 2017

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“…Thus, for experimental measurements of these systems to provide meaningful insight, the external parameters, the intrinsic interacting degrees of freedom, and the resulting properties must all be well characterized. Hence, measurements on samples subject to external perturbations, for example pressure and strain [5][6][7][8][9][10] , can provide additional insight into the underlying physics of these systems.…”

Section: Introductionmentioning

confidence: 99%

Modification of electronic structure in compressively strained vanadium dioxide films

Huffman

Hollingshad

et al. 2015

Phys. Rev. B

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Vanadium dioxide (VO 2 ) undergoes a phase transition between an insulating monoclinic (M 1 ) phase and a conducting rutile phase. Like other correlated electron systems, the properties of VO 2 can be extremely sensitive to small changes in external parameters such as strain. In this work, we investigate a compressively strained VO 2 film grown on [001] quartz substrate in which the phase transition temperature (T c ) has been depressed to 325K from the bulk value of 340K. Infrared and optical spectroscopy reveals that the lattice dynamics of this strained film are very similar to unstrained VO 2 . However, some of the electronic inter-band transitions of the strained VO 2 film are significantly shifted in energy from those in unstrained VO 2 . That the lattice dynamics remain largely unchanged, while the T c and some of the electronic inter-band transitions differ substantially from the bulk values highlight the role of electronic correlations in driving this metal-insulator phase transition.

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“…7,8,12,[16][17][18] strongly correlated electron system that exhibits a characteristic metal-insulator transition (MIT) at ∼68 • C, where its resistance decreases by more than four orders of magnitude. 19 Tokura et al used ionic liquids to reversibly switch epitaxial VO 2 films between insulating and metallic states.…”

Section: Introductionmentioning

confidence: 99%

“…7,8 However, S. P. Parkin et al proposed an entirely different mechanism to explain the ionic-liquid-controlled MIT in VO 2 films. 12,16 They believed that the electric-field-induced migration of oxygen vacancies in the VO 2 film by ionic liquids was critical for understanding the mechanism of the electrically manipulated MIT. Thus, it remains unclear how ionic liquids influence the transport properties of VO 2 films, and the tuning mechanism is not yet fully understood.…”

Section: Introductionmentioning

confidence: 99%

Resistance switching of epitaxial VO2/Al2O3 heterostructure at room temperature induced by organic liquids

et al. 2015

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We studied using organic liquids (cyclohexane, n-butanol, and ethylene glycol) to modulate the transport properties at room temperature of an epitaxial VO2 film on a VO2/Al2O3 heterostructure. The resistance of the VO2 film increased when coated with cyclohexane or n-butanol, with maximum changes of 31% and 3.8%, respectively. In contrast, it decreased when coated with ethylene glycol, with a maximum change of −7.7%. In all cases, the resistance recovered to its original value after removing the organic liquid. This organic-liquid-induced reversible resistance switching suggests that VO2 films can be used as organic molecular sensors.

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Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy

Cited by 485 publications

References 31 publications

Strain-Engineered Oxygen Vacancies in CaMnO₃ Thin Films

Strain-Engineered Oxygen Vacancies in CaMnO₃ Thin Films

Modification of electronic structure in compressively strained vanadium dioxide films

Resistance switching of epitaxial VO2/Al2O3 heterostructure at room temperature induced by organic liquids

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Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy

Cited by 485 publications

References 31 publications

Strain-Engineered Oxygen Vacancies in CaMnO3 Thin Films

Strain-Engineered Oxygen Vacancies in CaMnO3 Thin Films

Modification of electronic structure in compressively strained vanadium dioxide films

Resistance switching of epitaxial VO2/Al2O3 heterostructure at room temperature induced by organic liquids

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Strain-Engineered Oxygen Vacancies in CaMnO₃ Thin Films

Strain-Engineered Oxygen Vacancies in CaMnO₃ Thin Films