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Traditional ultraviolet/soft X-ray angle-resolved photoemission spectroscopy (ARPES) may in some cases be too strongly influenced by surface effects to be a useful probe of bulk electronic structure. Going to hard X-ray photon energies and thus larger electron inelastic mean-free paths should provide a more accurate picture of bulk electronic structure. We present experimental data for hard X-ray ARPES (HARPES) at energies of 3.2 and 6.0 keV. The systems discussed are W, as a model transition-metal system to illustrate basic principles, and GaAs, as a technologically-relevant material to illustrate the potential broad applicability of this new technique. We have investigated the effects of photon wave vector on wave vector conservation, and assessed methods for the removal of phonon-associated smearing of features and photoelectron diffraction effects. The experimental results are compared to free-electron final-state model calculations and to more precise one-step photoemission theory including matrix element effects.

A detailed understanding of the origin of the magnetism in dilute magnetic semiconductors is crucial to their development for applications. Using hard X-ray angle-resolved photoemission (HARPES) at 3.2 keV, we investigate the bulk electronic structure of the prototypical dilute magnetic semiconductor Ga(0.97)Mn(0.03)As, and the reference undoped GaAs. The data are compared to theory based on the coherent potential approximation and fully relativistic one-step-model photoemission calculations including matrix-element effects. Distinct differences are found between angle-resolved, as well as angle-integrated, valence spectra of Ga(0.97)Mn(0.03)As and GaAs, and these are in good agreement with theory. Direct observation of Mn-induced states between the GaAs valence-band maximum and the Fermi level, centred about 400 meV below this level, as well as changes throughout the full valence-level energy range, indicates that ferromagnetism in Ga(1-x)Mn(x)As must be considered to arise from both p-d exchange and double exchange, thus providing a more unifying picture of this controversial material.

The evolution of ferromagnetic (FM) domains across the temperature-driven antiferromagnetic (AF) to FM phase transition in uncapped and capped epitaxial FeRh thin films was studied by x-ray magnetic circular dichroism and photoemission electron microscopy. The coexistence of the AF and FM phases was evidenced across the broad transition and the different stages of nucleation, growth, and coalescence were directly imaged. The FM phase nucleates into single domain islands and the width of the transition of an individual nucleus is sharper than that of the transition in a macroscopic average.

We use polarization-and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO 2 . We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline VO 2 films are preceded by the purely-electronic softening of Coulomb correlations within V-V singlet dimers. This process starts 7 K (±0.3 K) below the transition temperature, as conventionally defined by electronic transport and x-ray diffraction measurements, and sets the energy scale for driving the near-roomtemperature insulator-metal transition in this technologically-promising material.

Hard X-ray photoelectron spectroscopy (HAXPES) is establishing itself as an essential technique for the characterisation of materials. The number of specialised photoelectron spectroscopy techniques making use of hard X-rays is steadily increasing and ever more complex experimental designs enable truly transformative insights into the chemical, electronic, magnetic, and structural nature of materials. This paper begins with a short historic perspective of HAXPES and spans from developments in the early days of photoelectron spectroscopy to provide an understanding of the origin and initial development of the technique to state-of-the-art instrumentation and experimental capabilities. The main motivation for and focus of this paper is to provide a picture of the technique in 2020, including a detailed overview of available experimental systems worldwide and insights into a range of specific measurement modi and approaches. We also aim to provide a glimpse into the future of the technique including possible developments and opportunities.

The chemical and electronic-structure profiles of magnetic tunnel junction ͑MTJ͒ La 0.7 Sr 0.3 MnO 3 / SrTiO 3 ͑LSMO/STO͒ superlattices have been quantitatively determined via soft and hard x-ray standing-wave excited photoemission, x-ray absorption and x-ray reflectivity, in conjunction with x-ray optical and core-hole multiplet theoretical modeling. Epitaxial superlattice samples consisting of 48 and 120 bilayers of LSMO and STO, each nominally four unit cells thick, and still exhibiting LSMO ferromagnetism, were studied. By varying the incidence angle around the superlattice Bragg condition, the standing wave was moved vertically through the interfaces. By comparing experiment to x-ray optical calculations, the detailed chemical profile of the superlattice and its interfaces was quantitatively derived with angstrom precision. The multilayers were found to have a small ϳ6% change in periodicity from top to bottom. Interface compositional mixing or roughness over ϳ6 Å was also found, as well as a significant change in the soft x-ray optical coefficients of LSMO near the interface. The soft x-ray photoemission data exhibit a shift in the position of the Mn 3p peak near the interface, which is not observed for Mn 3s. Combined with core-hole multiplet theory incorporating Jahn-Teller distortion, these results indicate a change in the Mn bonding state near the LSMO/STO interface. Our results thus further clarify the reduced ͑MTJ͒ performance of LSMO/STO compared to ideal theoretical expectations.

We demonstrate a novel pathway to control and stabilize oxygen vacancies in complex transition-metal oxide thin films. Using atomic layer-by-layer pulsed laser deposition (PLD) from two separate targets, we synthesize high-quality singlecrystalline CaMnO 3 films with systematically varying oxygen vacancy defect formation energies as controlled by coherent tensile strain. The systematic increase of the oxygen vacancy content in CaMnO 3 as a function of applied in-plane strain is observed and confirmed experimentally using high-resolution soft X-ray absorption spectroscopy (XAS) in conjunction with bulk-sensitive hard X-ray photoemission spectroscopy (HAXPES). The relevant defect states in the densities of states are identified and the vacancy content in the films quantified using the combination of first-principles theory and core−hole multiplet calculations with holistic fitting. Our findings open up a promising avenue for designing and controlling new ionically active properties and functionalities of complex transition-metal oxides via strain-induced oxygen-vacancy formation and ordering.