We demonstrate a novel pathway to control and stabilize oxygen vacancies in complex transition-metal oxide thin films. Using atomic layer-by-layer pulsed laser deposition (PLD) from two separate targets, we synthesize high-quality singlecrystalline CaMnO 3 films with systematically varying oxygen vacancy defect formation energies as controlled by coherent tensile strain. The systematic increase of the oxygen vacancy content in CaMnO 3 as a function of applied in-plane strain is observed and confirmed experimentally using high-resolution soft X-ray absorption spectroscopy (XAS) in conjunction with bulk-sensitive hard X-ray photoemission spectroscopy (HAXPES). The relevant defect states in the densities of states are identified and the vacancy content in the films quantified using the combination of first-principles theory and core−hole multiplet calculations with holistic fitting. Our findings open up a promising avenue for designing and controlling new ionically active properties and functionalities of complex transition-metal oxides via strain-induced oxygen-vacancy formation and ordering.

The nature of the metal-insulator transition in thin films and superlattices of LaNiO3 only a few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate–film interface quality may also affect the observable properties of ultrathin films. Here we report results obtained for near-ideal LaNiO3 films with different thicknesses and terminations grown by atomic layer-by-layer laser molecular beam epitaxy on LaAlO3 substrates. We find that the room-temperature metallic behavior persists until the film thickness is reduced to an unprecedentedly small 1.5 unit cells (NiO2 termination). Electronic structure measurements using X-ray absorption spectroscopy and first-principles calculation suggest that oxygen vacancies existing in the films also contribute to the metal-insulator transition.

Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesis technique. Using high resolution scanning tunneling microscopy and spectroscopy (STM/STS), photoemission electron microscopy/spectroscopy (PEEM) and μ-ARPES we investigate the electronic properties of MoS2 as a function of the number of layers at the nanoscale and show in-depth how the band gap is affected by a shift of the valence band edge as a function of the layer number. Green’s function based electronic structure calculations were carried out in order to shed light on the mechanism underlying the observed bandgap reduction with increasing thickness, and the role of the interfacial Sulphur atoms is clarified. Our study, which gives new insight into the variation of electronic properties of MoS2 films with thickness bears directly on junction properties of MoS2, and thus impacts electronics application of MoS2.

We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functional calculations, we resolve the element-specific changes to the electronic structure across the metal-insulator transition. We demonstrate that the Fe electron valence undergoes no observable spectroscopic change between the metallic and insulating states, whereas the O electronic configuration undergoes significant changes. This strongly supports the bond-disproportionation model of the metal-insulator transition for CaFeO3 and highlights the importance of ligand holes in its electronic structure. By sensitively measuring the ligand hole density, however, we find that it increases by ∼5-10% in the insulating state, which we ascribe to a further localization of electron charge on the Fe sites. These results provide detailed insight into the metal-insulator transition of negative charge transfer compounds and should prove instructive for understanding metal-insulator transitions in other late transition metal compounds such as the nickelates.

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr 1+x Ti 1-x O 3+δ , Ruddlesden-Popper phase La n+1 Ni n O 3n+1 (n = 4), and LaAl 1+y O 3(1+0.5y) /SrTiO 3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO 3 /SrTiO 3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.npj Quantum Materials (2017) 2:10 ; doi:10.1038/s41535-017-0015-x INTRODUCTION Technological advances in atomic-layer control during oxide film growth have enabled the discoveries of new phenomena and new functional materials, such as the two-dimensional (2D) electron gas at the LaAlO 3 /SrTiO 3 interface, 1, 2 and asymmetric three-component ferroelectric superlattices. 3,4 Reactive molecular-beam epitaxy (MBE) and pulsed-laser deposition (PLD) are the two most successful growth techniques for epitaxial heterostructures of complex oxides. PLD possesses experimental simplicity, low cost, and versatility in the materials to be deposited. 5 Reactive MBE employing alternately-shuttered elemental sources (atomic layerby-layer MBE, or ALL-MBE) can control the cation stoichiometry precisely, thus producing oxide thin films of exceptional quality. [6][7][8] There are, however, limitations in both techniques. Reactive MBE can use only source elements whose vapor pressure is sufficiently high, excluding a large fraction of 4d and 5d metals. In addition, ozone is needed to create a highly oxidizing environment while maintaining low-pressure MBE conditions, which increases the system complexity. On the other hand, conventional PLD using a compound target often results in cation off-stoichiometry in the films. 9, 10 In this paper we present an approach that combines the strengths of reactive MBE and PLD: atomic layer-by-layer laser MBE (ALL-Laser MBE) using separate oxide targets. Ablating alternately the targets of constituent oxides, for example SrO and TiO 2 , a SrTiO 3 film can be grown one atomic layer at a time. Stoichiometry for both the cations and oxygen in the oxide films can be controlled. Although the idea of depositing atomic layers by PLD has been explored since the early days of laser MBE, 11,12 we show that levels of stoichiometry control and crystalline perfection rivaling those of

Rational design of low-dimensional electronic phenomena at oxide interfaces is currently considered to be one of the most promising schemes for realizing new energy-efficient logic and memory devices. An atomically-abrupt interface between paramagnetic LaNiO 3 and antiferromagnetic CaMnO 3 exhibits interfacial ferromagnetism, which can be tuned via a thickness-dependent metal-insulator transition in LaNiO 3. Once fully understood, such emergent functionality could turn this archetypal Mott-interface system into a key building block for the above-mentioned future devices. Here, we use depth-resolved standing-wave photoemission spectroscopy in conjunction with scanning transmission electron microscopy and x-ray absorption spectroscopy, to demonstrate a depth-dependent charge reconstruction at the LaNiO 3 /CaMnO 3 interface. Our measurements reveal an increased concentration of Mn 3+ and Ni 2+ cations at the interface, which create an electronic environment favourable for the emergence of interfacial ferromagnetism mediated via the Mn 4+-Mn 3+ ferromagnetic double exchange and Ni 2+-O-Mn 4+ superexchange mechanisms. Our findings suggest a new strategy for designing functional Mott oxide heterostructures by tuning the interfacial cation characteristics via controlled manipulation of thickness, strain, and ionic defect states. by tuning the thickness of the LaNiO layer, which undergoes a metal-insulator transition in the ultrathin limit (<4 u.c.), resulting in the thickness-dependent controllability of the magnetic moment at the interface as demonstrated in a prior study [15].

Solution-based growth of magnetic FePt-FeCo (core-shell) nanoparticles with a controllable shell thickness has been demonstrated. The transition from spin canting to exchange coupling of FePt-FeCo core-shell nanostructures leads to a 28% increase in the coercivity (12.8 KOe) and a two-fold enhancement in the energy product (9.11 MGOe).

Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes, with typical information depths of a few Ångstroms. Here, we use a combination of bulk-sensitive soft x-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard x-ray photoelectron spectroscopy (HAXPES) and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of NdNiO3 confined between two 4-unit cell-thick layers of insulating LaAlO3. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the firstprinciples calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band (VB) bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers. KeywordsStrongly-correlated oxides, soft x-ray angle-resolved photoelectron spectroscopy, hard x-ray photoelectron spectroscopy