Ruthenic acid nanosheet colloids were prepared by dispersing a tetrabutylammonium-ruthenic acid intercalation compound in acetonitrile, or N,N-dimethylformamide. Nanosheet electrodes were fabricated on gold, indium-tin oxide (ITO)-coated glass, and ITO-coated PET electrodes by electrophoretic deposition using these colloids. Transparent or flexible electrodes could be fabricated by using ITO electrodes as the substrate. The deposited amount of material could easily be controlled by the extent of deposition, which was confirmed from the linear increase in specific capacitance as a function of the deposition time. The ruthenic acid nanosheet electrodes using Au substrates exhibited gravimetric capacitance of 620 F (g-RuO 2 ) -1 . Specific capacitance of 0.82 F cm -2 (geometric) was achieved at a scan rate of 2 mV s -1 with a film deposited at 5 V cm -1 for 1 h.

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MoSi2 film properties for a gate material in LSI were investigated. The film resistivity was 7×10-4 ohm-cm and decreased to 1×10-4 ohm-cm after annealing at high temperature. The structure was amorphous in as-deposited film and changed to polycrystalline with nearly 500 Å grains after annealing. The film oxidation rate was as low as that of poly Si, because of SiO2 formation on the film surface. The properties against chemical reagents used in LSI process were similar to those of poly Si. MoSi2 gate MOS device characteristics were investigated. A high speed ROM was fabricated with MoSi2 for gate material.

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