Abstract-This paper presents low noise amplifier (LNA) for wireless application which has been implemented in a 0.15µm GaAs pHEMT technology. The LNA was designed using cascode topology with feedback techniques which produces better gain and good stability over entire frequency. At 2.4 GHz, this amplifier achieves power gain of 23 dB, isolation of 35 dB and input reflection coefficient of -12 dB at 2.4 GHz. With operating voltage supply at 3V, the total current consumptions for the LNA is 18 mA.
This paper is discusses about parasitic effect of spiral inductors on 5.8 GHz low noise amplifier (LNA) performances based on 0.5 µm GaAs pHEMT technology. Using S-parameter simulation, performance of the LNA between lump and distributed circuit are compared at 5.8 GHz. Electrical performance of the LNA performances by placing ideal components with non-ideal components shows that noise figure is increased by 2.31 dB, gain is decreased by 11.38 dB and input and output return loss is increased by 0.31 dB and 4.31 dB respectively. By using non-ideal components in the lump circuit analysis, it is shown that the spiral inductor has a noticeable impact on the LNA performance. The parasitic effects including self resonance on spiral inductors is discussed. This analysis is essential to ensure the simulation results yield realistic measured results for the fabricated LNA. Therefore the designer will have a good estimation on the performance of the LNA performance during the design stage prior to the testing stage.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.