15 GHz SPDT switch design using 0.15 µm GaAs technology for microwave applications

Sanusi, R.; Ismail, Mohamed A.; Norhapizin, K.; Rahim, Ahmad Ismat Abdul; Marzuki, Arjuna; Yahya, Mohamed

doi:10.1109/iced.2008.4786675

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Cited by 4 publications

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“…Its power handling capacity limits the output power of the transmitting chain, and its insertion loss limits the noise figure of the receiving chain. The P À1dB of the typical GaAs switch is relatively lower [4,5,6,7], which is not more than 29 dBm. In the practical application, the PIN switch [8] or GaN switch [9] is chosen to meet the phased array system requirement instead of GaAs switch.…”

Section: Introductionmentioning

confidence: 99%

Ku band 2 watt TR chip for phased array based on GaAs technology

Yuan

Yang

Chen

et al. 2016

IEICE Electron. Express

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A Ku-band transceiver chip (TR chip), which can be used for the phased array system, is presented in this paper. It includes a high power amplifier (HPA), a low noise amplifier (LNA) and two switches. The transmitting chain can provide over 2 watt (W) RF output power and 14 dB gain, meanwhile the receiving chain shows less than 3 dB noise figure and 25 dB gain in the frequency range of 15 to 17.5 GHz. A novel switch based on GaAs pHEMT process is also proposed, which can handle over 2 W RF output power without sacrificing the performance of the receiving chain. The size of the TR chip is 3 mm × 3 mm.

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