2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) 2015
DOI: 10.1109/rsm.2015.7354979
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The design of ground shield spiral inductor using 0.13 μm CMOS technology for millimeter-wave radio over fiber applications

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Cited by 7 publications
(2 citation statements)
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“…To analyze spiral inductors on layered silicon substrates [7], the volume integral-equation method is employed to detect the uneven current distribution in the coil [8]; and a semi-analytical model is built for the circular spiral inductors on a substrate. Although they have achieved good experimental results, some methods can not be used in more complex structure, such as the honeycomb oxide trench, buried layer renewal and radial patterned ground shield [2], [9].…”
Section: Introductionmentioning
confidence: 99%
“…To analyze spiral inductors on layered silicon substrates [7], the volume integral-equation method is employed to detect the uneven current distribution in the coil [8]; and a semi-analytical model is built for the circular spiral inductors on a substrate. Although they have achieved good experimental results, some methods can not be used in more complex structure, such as the honeycomb oxide trench, buried layer renewal and radial patterned ground shield [2], [9].…”
Section: Introductionmentioning
confidence: 99%
“…Σε αυτή την παράγραφο θα παρουσιαστεί η συμπεριφορά τους στις υψηλές συχνότητες χρησιμοποιώντας και πάλι την τεχνολογία TSMC 65nm. Οι ασπίδες μπορεί να σχεδιάζονται στο επίπεδο πολυπυριτίου [31] ή στα 3 πρώτα επίπεδα μετάλλων [32] και θα μπορούσαν είτε να είναι γειωμένες [33] είτε μη γειωμένες [34,35]. Οι ασπίδες προτείνονται σε διάφορα φυσικά σχέδια: επίπεδες (planar), με εγκοπές (patterned) γειωμένες (grounded) ή μη (floating) [33,36], γραμμωτές (finger) [37] και άλλες όχι τόσο ευρέως χρησιμοποιούμενες [34].…”
Section: ασπίδεςunclassified