Electron transport and recombination in dye-sensitized nanocrystalline solar cells (DSCs) are strongly influenced by the presence of trapping states in the titanium dioxide particles, and collection of photoinjected electrons at the contact can require times ranging from milliseconds to seconds, depending on the illumination intensity. A direct method of determining the density and energetic distribution of the trapping states responsible for slowing electron transport has been developed. It involves extraction of trapped electrons by switching the cell from an open circuit to a short circuit after a period of illumination. An advantage of this charge extraction method is that it is less sensitive than other methods to shunting of the DSC by electron transfer at the conducting glass substrate. Results derived from charge extraction measurements on DSCs (with and without compact TiO(2) blocking layers) are compared with those obtained by analysis of the open circuit photovoltage decay.

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It is shown that application of the so-called quasi-static approximation greatly simplifies the theoretical treatment of the open circuit photovoltage decay of dye-sensitized nanostructured solar cells (DSCs), since it removes the need to treat the kinetics of trapping and detrapping explicitly and leads to a straightforward analytical solution in the case of an exponential trap distribution. To identify the conditions under which the quasi-static approach is valid, transients calculated using the quasi-static approximation are compared with the results of numerical calculations that treat trapping and detrapping of electrons explicitly. The application of the quasi-static approach to derive the rate constant for the back-reaction of electrons from experimental photovoltage decay data is illustrated for an optimized DSC.

The spatial dependence of the electron quasi-Fermi level (QFL) in the interior of dye sensitized nanocrystalline solar cells (DSC) under short circuit conditions can be inferred from calculations based on a diffusive electron transport model. The calculations predict that the difference in the QFL between the electrolyte and contact sides of the TiO(2) layer under short circuit conditions at 1 sun could be as much as 0.5-0.7 eV. The predicted QFL profiles depend on assumptions made about energy positions, electron mobility, and the conduction band density of states. In this work, the position of the QFL at the electrolyte side of the dye sensitized TiO(2) film in a DSC has been measured using a thin passivated titanium contact deposited on top of the nanocrystalline TiO(2) by evaporation. The method allows changes in the electron QFL at all points on the IV characteristic of the cell to be monitored under dark and photostationary conditions. In addition, cells incorporating the titanium electrode can give information about the behavior of the QFL under dynamic conditions.