No abstract

No abstract

Copper oxide and cobalt oxide (CuO, Co3O4) nanocrystals (NCs) have been successfully prepared in a short time using microwave irradiation without any postannealing treatment. Both kinds of nanocrystals (NCs) have been prepared using copper nitrate and cobalt nitrate as the starting materials and distilled water as the solvent. The resulted powders of nanocrystals (NCs) were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) measurements. The obtained results confirm the presence of the both of oxides nanopowders produced during chemical precipitation using microwave irradiation. A strong emission under UV excitation is obtained from the prepared CuO and Co3O4nanoparticles. The results show that the nanoparticles have high dispersion and narrow size distribution. The line scans of atomic force microscopy (AFM) images of the nanocrystals (NCs) sprayed on GaAs substrates confirm the results of both X-ray diffraction and transmission electron microscopy. Furthermore, vibrational studies have been carried out using Raman spectroscopic technique. Specific Raman peaks have been observed in the CuO and Co3O4nanostructures, and the full width at half maximum (FWHM) of the peaks indicates a small particle size of the nanocrystals.

We demonstrate quantum interference between photons generated by the radiative decay processes of excitons that are bound to isolated fluorine donor impurities in ZnSe/ZnMgSe quantum-well nanostructures. The ability to generate single photons from these devices is confirmed by autocorrelation experiments, and the indistinguishability of photons emitted from two independent nanostructures is confirmed via a Hong-Ou-Mandel dip. These results indicate that donor impurities in appropriately engineered semiconductor structures can portray atomlike homogeneity and coherence properties, potentially enabling scalable technologies for future large-scale optical quantum computers and quantum communication networks.

The near band edge photoluminescence (PL) of cubic GaN epilayers grown by radio frequency (rf) plasma-assisted molecular beam epitaxy on (100) GaAs is measured. Since the PL is excited with an unfocused laser beam it resembles the layer properties rather than the properties of micron-size inclusions or micro crystals. The low temperature PL spectra show well separated lines at 3.26 and 3.15 eV which are due to excitonic and donor-acceptor pair transitions (donor binding energy 25 meV, acceptor binding energy 130 meV). No emission above the band gap of the cubic phase is detected. PL results are confirmed by x-ray diffraction and atomic force microscopy which reveal only negligible contributions from hexagonal inclusions and micron size single crystals. The room temperature PL consists of an emission band at about 3.21 eV with a full width at half maximum of 117 meV.

Electron accumulation is found to occur at the surface of wurtzite ͑1120͒, ͑0001͒, and ͑0001͒ and zinc-blende ͑001͒ InN using x-ray photoemission spectroscopy. The accumulation is shown to be a universal feature of InN surfaces. This is due to the low ⌫-point conduction band minimum lying significantly below the charge neutrality level.

No abstract

High-quality ZnS, ZnSe, and ZnTe epitaxial films were grown on ͑001͒-GaAs-substrates by molecular beam epitaxy. The 1s-exciton peak energy positions have been determined by absorption measurements from 2 K up to about room temperature. For ZnS and ZnSe additional high-temperature 1s-exciton energy data were obtained by reflectance measurements performed from 300 up to about 550 K. These complete E 1s (T) data sets are fitted using a recently developed analytical model. The high-temperature slopes of the individual E 1s (T) curves and the effective phonon temperatures of ZnS, ZnSe, and ZnTe are found to scale almost linearly with the corresponding zero-temperature energy gaps and the Debye temperatures, respectively. Various ad hoc formulas of Varshni type, which have been invoked in recent articles for numerical simulations of restricted E 1s (T) data sets for cubic ZnS, are discussed.