The near band edge photoluminescence of cubic GaN epilayers

As, D. J.; Schmilgus, F.; Wang, C.; Schöttker, B.; Schikora, D.; Lischka, K.

doi:10.1063/1.118521

Cited by 156 publications

(108 citation statements)

References 14 publications

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“…The FWHM of the 381 nm peak was approximately 5.9 nm (130 meV). The FWHM of our β-GaN is wider than those obtained by Okumura et al for β-GaN on a 3C-SiC substrate using ECR-MBE ( 19 meV at 4.2 K) [10] and by As et al for β-GaN on a GaAs substrate using RF-MBE ( 24 meV at 2 K) [11]. The intensity of the yellow band between 500 and 700 nm, which is typically observed for hexagonal GaN, was 1000 times lower than that of the near band-edge peak at 381 nm.…”

Section: Crystal Qualitycontrasting

confidence: 46%

Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)

Hiroyama¹,

Tamura²

1999

MRS Internet j. nitride semicond. res.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.9(1999)We have investigated the growth conditions of cubic GaN (β-GaN) layers on very thin SiC-covered Si(001) by using gas-source molecular beam epitaxy as functions of SiC layer thickness, Ga-cell temperature and substrate temperature. Under the present SiC formation conditions on Si substrates by carbonization using C 2 H 2 gas, the SiC layers with the thickness between 2.5 and 4 nm result in the epitaxial growth of β-GaN on thus SiC-formed Si substrates. At the highest GaN growth rate of 110 nm/h ( a Ga-cell temperature of 950 °C), β-GaN layers grown at a substrate temperature of 700 °C show a nearly flat surface morphology and the fraction of included hexagonal GaN becomes negligible when compared to the results of β-GaN layers grown under other conditions of Ga-cell and substrate temperatures. Thus obtained β-GaN films have good performance in photoluminescence intensity although the FWHM of band-edge recombination peak is still wider (137 meV) than the reported values for the β-GaN on 3C-SiC and GaAs.

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Section: Crystal Qualitycontrasting

confidence: 46%

Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)

Hiroyama¹,

Tamura²

1999

MRS Internet j. nitride semicond. res.

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“…8 For the group III-nitride material system reports of WZ/ZB heterostructures have not been published so far, with the only exception of the work by Renard et al 9 analyzing the properties of GaN nanowires with a WZ base and a ZB top segment. In GaN, the properties of the ZB phase 10 of its inclusions in a WZ matrix 11 and of stacking faults (SF) (Refs. 12-14) have been studied in the bulk material.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

Jacopin

Rigutti

Largeau

et al. 2011

Journal of Applied Physics

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The optical and structural properties of wurtzite GaN nanowires containing zinc-blende GaN inclusions of different thicknesses are investigated. Micro-photoluminescence spectra of single nanowires exhibit a series of narrow emission peaks with linewidth as low as 0.8 meV in the interval 3.1-3.42 eV. The peak energy blue-shifts with increasing excitation power following a $I 1/3 law due to the progressive band filling and to the screening of the internal field. The quantum confinement in these type-II crystal phase heterostructures was simulated in the framework of a one-dimensional effective mass model, accounting for the internal electrical polarization of the wurtzite GaN. The predicted transition energies are in good agreement with the energy statistics realized on more than 30 single nanowire emission spectra.

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“…Experimental exciton binding energies (in meV) are taken from Refs. [26][27][28][29][30][31][32][33] and shown only for comparison. We find that the TDA consistently underestimates the exciton binding energies compared to the full calculation.…”

Section: Tda and Exciton Binding Energiesmentioning

confidence: 99%

Excitons in Solids from Time-Dependent Density-Functional Theory: Assessing the Tamm-Dancoff Approximation

Byun

Ullrich

2017

Computation

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Excitonic effects in solids can be calculated using the Bethe-Salpeter equation (BSE) or the Casida equation of time-dependent density-functional theory (TDDFT). In both methods, the Tamm-Dancoff approximation (TDA), which decouples excitations and de-excitations, is widely used to reduce computational cost. Here, we study the effect of the TDA on exciton binding energies of solids obtained from the Casida equation using long-range-corrected (LRC) exchange-correlation kernels. We find that the TDA underestimates TDDFT-LRC exciton binding energies of semiconductors slightly, but those of insulators significantly (i.e., by more than 100%), and thus it is essential to solve the full Casida equation to describe strongly bound excitons. These findings are relevant in the ongoing search for accurate and efficient TDDFT approaches for excitons.

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The near band edge photoluminescence of cubic GaN epilayers

Cited by 156 publications

References 14 publications

Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)

Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

Excitons in Solids from Time-Dependent Density-Functional Theory: Assessing the Tamm-Dancoff Approximation

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