Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

King, P. D. C.; Veal, T. D.; McConville, Christopher F; Fuchs, F.; Furthmüller, J.; Bechstedt, F.; Schley, P.; Goldhahn, R.; Schörmann, Jörg; As, D. J.; Lischka, K.; Muto, Daisuke; Naoi, H.; Nanishi, Yasushi; Lu, Hai; Schaff, William J.

doi:10.1063/1.2775807

Cited by 104 publications

(104 citation statements)

References 25 publications

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“…For this, we have to distinguish between the bulk Fermi level position and the surface band bending. First, we address the surface band bending: The thus-far-reported electron accumulation zones are due to a downward surface band bending of ∼0.7−1.5 eV [2,13]. This magnitude of band bending requires a pinning level deep in the conduction band at the surface.…”

Section: B Electronic Propertiesmentioning

confidence: 99%

“…Hence, experiments need to be performed either at heteroepitaxially grown layers [2,7,10,[13][14][15][16][17][18] or at nanostructures [4,8,19]. However, heteroepitaxially grown layers typically contain a high density of defects, while nanostructures show interface and/or surface effects, both leading to a rather complex data interpretation.…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, high interest has developed around indium nitride (InN) due to measurements and calculations suggesting highly intriguing electronic properties, such as the existence of an electron accumulation in the bulk conduction band [1][2][3][4][5][6], an extremely large electron affinity [7,8], or the supposed impossibility of obtaining effectively p-doped surfaces [9]. Even superconductivity was reported [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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Intrinsic electronic properties of high-quality wurtzite InN

et al. 2016

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Recent reports suggested that InN is a highly unusual III-V semiconductor, whose behavior fundamentally differs from that of others. We therefore analyzed its intrinsic electronic properties on the highest available quality InN layers, demonstrating the absence of electron accumulation at the (1010) cleavage surface and in the bulk. The bulk electron density is governed solely by dopants. Hence, we conclude that InN acts similarly to the other III-V semiconductors and previously reported intriguing effects are related to low crystallinity, surface decomposition, nonstoichiometry, and/or In adlayers.

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Section: B Electronic Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Intrinsic electronic properties of high-quality wurtzite InN

et al. 2016

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“…In the latter case an electron accumulation at the surfaces of the crystal is induced [65]. Such an electron accumulation is frequently observed at polar and non-polar InN surfaces [66,67], raising the question of whether it is an intrinsic material property or not.…”

Section: Energetic Position Of the Fermi Levelmentioning

confidence: 99%

Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

Physica Rapid Research Ltrs

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The intrinsic structural and electronic properties of a surface are important for any further study or application of the material, especially when a high surface‐to‐volume ratio is obtained or the surface gets functionalized, as e.g. during growth. Due to increasing material quality over recent years, the first experimental results are now available for the non‐polar group‐III nitride semiconductor surface, which can be compared with previously reported theoretical calculations. While the reports on AlN and InN surfaces are still small in number, for GaN quite a lot of experimental results on the non‐polar surfaces were published on the intrinsic geometric and electronic properties, the defects, the decomposition, and the effect of impurities. Furthermore, the growth on non‐polar group‐III nitride surfaces is a new concept to reduce undesirable piezoelectric polarization in heterostructures and the side walls of wurtzite‐structured nano‐wires are formed mostly by non‐polar facets. Hence, we review the existing intrinsic structural and electronic properties of non‐polar surfaces of group‐III nitride semiconductors in this contribution.magnified imageThe three different non‐polar surfaces of III–V semiconductors with filled (bright green) and empty (bright red) dangling bonds: left (red) the (10\bar 10) surface of the wurtzite crystal structure, middle (blue) the (11\bar 20) surface of the wurtzite crystal structure, and right (green) the ({110}) surface of the zincblende structure. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In the latter case an electron accumulation at the surfaces of the crystal is induced. 4 Such an electron accumulation is typically observed at InN surfaces, 5,6 raising the question of whether it is an intrinsic material property or not.…”

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confidence: 99%

Direct measurement of the band gap and Fermi level position at InN(112¯)

Ebert

Schaafhausen

Lenz

et al. 2011

Applied Physics Letters

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A nonpolar stoichiometric InN(112¯0) surface freshly cleaved inside UHV was investigated by scanning tunneling microscopy and spectroscopy. Due to the absence of intrinsic surface states in the band gap, scanning tunneling spectroscopy yields directly the fundamental bulk band gap of 0.7±0.1 eV. The Fermi energy is pinned 0.3 eV below the conduction band minimum due to cleavage induced defect states. Thus, intrinsic electron accumulation can be excluded for this surface. Electron accumulation is rather an extrinsic effect due to surface contamination or material decomposition, but not an intrinsic material property of InN.

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Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

Cited by 104 publications

References 25 publications

Intrinsic electronic properties of high-quality wurtzite InN

Intrinsic electronic properties of high-quality wurtzite InN

Non‐polar group‐III nitride semiconductor surfaces

Direct measurement of the band gap and Fermi level position at InN(112¯)

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