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A DJal-Active-Device-byer(DUAL)-CMOS structure has been developed for achieving high density LSIs. It consists of NMOSFETs in a lower bulk-Si and PMOSFETs in an upper SO1 film. The most important structural feature is that upper PMOSFET electrodes are directly interconnected to lower NMOSFET electrodes using a vertical tungsten plug-in wiring technique. The plug-in wirings perform that the device area is reduced to approximately 50%, as compared with that of a conventional bulk-Si CMOS. The contact resistance of the plug-in wiring for the upper and lower MOSFETs did not affect the MOSFET characteristics. It was confiied that the propagation delay time of 43-stage ring oscillator was about 10% faster than that for a conventional bulk-Si CMOS.