CdTe has been grown on Si(100) by molecular beam epitaxy. Two orientations can be obtained: (111)B CdTe when the CdTe is deposited directly on the Si(100) substrates, and (100)CdTe when an intermediate layer of ZnTe is grown first. The (111)B oriented layers are made of two domains which are rotated by 90°. A layer with only one domain can be grown on Si(100) misoriented by 8°, but the best misorientation for this purpose still needs to be found. These layers were characterized by reflection high-energy electron diffraction, photoluminescence spectroscopy, scanning electron microscopy, and x-ray diffraction. Hg1−xCdxTe has also been grown by molecular beam epitaxy on (111)B CdTe on Si(100).
We have applied transient photocapacitance and transient junction photocurrent measurements to the study of undoped hydrogenated amorphous silicon (a-Si:H) films, and find that the electronic optical transition from the dominant deep defect is very similar in energy to the D−→D0+e optical transition identified in n-type doped a:Si:H films. In addition, we have observed a competing hole thermal transition, and we have obtained estimates of its thermal emission rate and of the thermal gap. We have used the difference between photocapacitance and photocurrent in the valence-band tail region to determine the quantity (μτ)hNT at different temperatures. Finally, we have observed that light-induced metastable defects have a hole capture cross section significantly larger than that of the intrinsic defects.
CdTe films were grown in both the (211) and (133) orientations on GaAs(211)B substrates by molecular beam epitaxy. The orientation of the epitaxy is dependent on the thermal cleaning process. Studies of these films included in situ reflected high-energy electron diffraction, x-ray double-crystal diffractometry, transmission electron microscopy, and photoluminescence, which revealed high quality for both CdTe growth orientations, and especially for the CdTe(133). The lattice of the CdTe(211) growth tilts 3° with respect to its GaAs(211) substrate about the CdTe[01̄1]//GaAs[01̄1] coincidence axis. The CdTe(133) has no tilt with respect to its substrate, and its coincidence axes are CdTe[01̄1]//GaAs[01̄1] and CdTe[61̄1̄]//GaAs[1̄11].
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