Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)

Sporken, R.; Sivananthan, S.; Mahavadi, K. K.; Monfroy, G.; Boukerche, M.; Faurie, J. P.

doi:10.1063/1.102159

Cited by 110 publications

(40 citation statements)

References 14 publications

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“…Each growth begins with a thick buffer layer consisting of about 1 µm of ZnTe and 8-9 µm of CdTe. Early studies 4,5 have demonstrated that the ZnTe initiation layer is important to preserve the substrate orientation, in the present case the (112)B, before the CdTe layer, which serves to attenuate the propagating threading dislocation density. After the buffer layer, a p-on-n MWIR double-layer heterojunction (DLHJ) having a roomtemperature (RT) cutoff wavelength (λ co ) of about 4.7 µm is grown.…”

Section: Methodsmentioning

confidence: 97%

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

Vilela

Buell

Newton

et al. 2005

Journal of Elec Materi

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Middle wave infrared (MWIR) HgCdTe p-on-n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100-mm Si (112) substrates by molecular beam epitaxy (MBE) for large format 2,560 ϫ 512 focal plane arrays (FPAs). In order to meet the performance requirements needed for these FPAs, cutoff and doping uniformity across the 100-mm wafer are crucial. Reflection high-energy electron diffraction (RHEED), secondary ion mass spectrometry (SIMS), Fourier transform infrared spectrometry (FTIR), x-ray, and etch pit density (EPD) were monitored to assess the reproducibility, uniformity, and quality of detector material grown. Material properties demonstrated include x-ray full width half maximum (FWHM) as low as 64 arc-sec, typical etch pit densities in mid-10 6 cm Ϫ2 , cutoff uniformity below 5% across the full wafer, and typical density of macrodefects Ͻ 1000 cm Ϫ2 . The detector quality was established by using test structure arrays (TSAs), which include miniarray diodes with the similar pitch as the detector array for easy measurement of critical parameters such as diode I-V characteristics and detector quantum efficiency. Typical I-V curves show excellent R o A products and strong reverse breakdown characteristics. Detector quantum efficiency was measured to be in the 60-70% range without an antireflection coating.

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Section: Methodsmentioning

confidence: 97%

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

Vilela

Buell

Newton

et al. 2005

Journal of Elec Materi

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“…Each growth began with a buffer layer consisting of about 0.5-lm-thick ZnTe and 7-lm-thick CdTe. Early studies 5,6 demonstrated that the ZnTe initiation layer is important to preserve the substrate orientation; in the present case the crystalline orientation is (112)B, before the CdTe layer, which serves to attenuate the propagating threading dislocations. After the buffer layer, the detector structure is grown.…”

Section: Methodsmentioning

confidence: 96%

LWIR HgCdTe Detectors Grown on Ge Substrates

Vilela

Lofgreen

Smith

et al. 2008

Journal of Elec Materi

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“…Crystal quality has improved dramatically since 1989, when single crystalline CdTe(111)B was first grown on Si(001) by MBE, with the demonstration that a ZnTe buffer layer can be used to preserve the homo-orientation of CdTe/Si. 5 Due to the large lattice mismatch of 5.5% and the huge thermal mismatch of 266% between CdTe and PbSnSe, large strain near the interface between PbSnSe and CdTe is expected. We show that the strain can be released by a series of imperfect glide dislocations.…”

Section: Introductionmentioning

confidence: 99%

Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy

Wang

Fulk

Zhao

et al. 2008

Journal of Elec Materi

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Narrow-bandgap PbSnSe has received much attention as a promising alternative material for mid-and long-wavelength high performance of infrared detection at relatively high operating temperatures owing to the weak composition dependence of its bandgap, which can intrinsically result in better uniformity. Additionally, it possesses a high dielectric constant that is anticipated to be much more tolerant to defects. In addition, its growth by molecular beam epitaxy (MBE) can be easily accomplished in comparison with HgCdTe and many III-V quantum well and superlattice materials. However, overcoming the high lattice and thermal mismatches between PbSnSe and CdTe/Si substrates and improving the crystalline quality of PbSnSe grown on CdTe/Si substrates are challenges that require further study. Additionally, interdiffusion between CdTe and PbSnSe can take place and lead to nonuniform distributions of elements in PbSnSe. Epitaxial crystal PbSnSe alloy films were grown by MBE and were investigated by scanning and high-resolution transmission electron microscopy (STEM/HRTEM). Etch pit density (EPD) measurements were done to determine the density of threading defects in the films. EPD measurements on PbSnSe surfaces gave values in the mid-10 6 cm -2 range. The dislocations exposed as etch pits were found to accumulate and form small-angle grain boundaries lined up along the (011) direction, which is the intersection line between (100) and (211) growth planes.

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Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)

Cited by 110 publications

References 14 publications

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

LWIR HgCdTe Detectors Grown on Ge Substrates

Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy

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