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We propose a new optical memory structure using self-assembled InAs quantum dots (QDs) for possible applications to wavelength-domain-multiplication memory, which should lead to increase memory density. Data stored in this memory structure can be read using photocurrent and then erased electrically. In a preliminary study, we confirmed the memory effect of photocurrent caused by the InAs QDs for the first time. A retention time of 0.48 ms for the memory was obtained at 300 K.

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Abstract-A new functional, resonant-tunneling hot electron transistor (RHET) is demonstrated in which electrons are injected from emitter to base by resonant-tunneling through a quantum well, and are near-ballistically transferred to a collector. The main feature of this device is a peaked collector-current characteristic with respect to the base-emitter voltage. This enables us to build a frequency multiplier or an Exclusive-NOR gate using only one transistor.