A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)

Abstract

Abstract-A new functional, resonant-tunneling hot electron transistor (RHET) is demonstrated in which electrons are injected from emitter to base by resonant-tunneling through a quantum well, and are near-ballistically transferred to a collector. The main feature of this device is a peaked collector-current characteristic with respect to the base-emitter voltage. This enables us to build a frequency multiplier or an Exclusive-NOR gate using only one transistor.

Electronic transport of molecular systems

“…Through the use of NDR devices, circuits with complicated functions can be implemented with significantly fewer components [12][13][14][15][16][17]. There are various NDR devices such as Esaki tunnel diode [5], Gunn effect diode [6], resonant tunneling diode [7], etc., caused by various physical mechanisms.…”

Electron transmission in symmetric and asymmetric double-barrier structures controlled by laser fields

“…In this respect, the electron transmission and resonant tunneling in one dimensional structures is a current problem in theoretical and experimental investigations [1][2][3][4]. Based on resonant tunneling phenomenon, experimental research on resonant tunneling diodes [5][6][7] and resonant tunneling transistors [8][9][10] have been carried out. Double-barrier resonant tunneling quantum structures have been extensively investigated due to their potential device http://dx.doi.org/10.1016/j.spmi.2015.05.016 0749-6036/Ó 2015 Elsevier Ltd. All rights reserved.…”

Time-resolved photoluminescence of delta-doped AlGaAs/GaAs heterostructures

“…The electron transfer and tunnelling are commonly studied by electrical technique [4,5]. However, some authors have used time-resolved photoluminescence (TRPL) to investigate perpendicular transfer [6][7][8].…”