and IL/Si interfaces (3). There is an additional non-uniformity in the trap density encountered by the A new 1/f noise model based on correlated number-mobility tunneling electrons, due to the combined effect of the fluctuations theory is proposed to account for the low non-uniform energy distribution of the traps and the band frequency noise in MOSFETs with multi-layered gate bending in the gate dielectric caused by the applied gate bias. dielectrics. In this new model, the trap density profile takes Thus, for IL, OHKVgHK/THK)Z'+7HKZ'] as the dominant mechanism for 1/f noise, with no Here, z is the distance into the dielectric stack, contribution from remote phonon scattering to the observed z' = Z -TIL ,NtOIL is the trap density at Ei and at the Si/IL fluctuations. The model was experimentally verified on interface, NtOHK is the trap density at Ei and at the IL/HK devices having different interfacial layer (IL) thicknesses and interface, Ei is the intrinsic Fermi level at Si/IL various fabrication processes over a wide temperature and interface, 4 represents the modeling parameter that defines bias range. the energy dependence of the traps, 17 is the modeling parameter for the spatial distribution of the traps, A is the Introduction fitting parameter for the band bending term, and T represents the physical thicknesses. The noise model, referred to as Multi-Stack Unified Noise (MSUN) model from here on, is based on the correlated The multilayer structure of the high-K gate dielectric stacks number-mobility fluctuations theory (Unified Model) (1). A has been implemented in the new model in terms of carriers number of discrepancies have been noted by researchers tunneling through a double-layer cascaded barrier instead of a associated with the application of the original Unified 1/f single step barrier. Tunneling probability of carriers at each Noise Model to MOSFETs with high-K (HK) dielectric boundary was calculated using Schrodinger's equation. The materials (2). Variation in the extracted dielectric trap density quantum mechanical reflection at the IL-HK interface was values and its dependence on the interfacial layer (IL) neglected, since for Inm of Sio2 IL, the ratio of the forward thickness are the most notable ones. The underlying reasons traveling wave magnitude to that of the reflected one can be
A new physically based Si MOSFET large signal miodel, BSIM3v3, developed by UC Berkeley, has been evaluated for high-frequency mixed-signal circuit analysis in a frequency domain, harmonic balance simulator. The model is validated using simulated RF power characteristics of automatic load pull measurement at different bias and matching conditions.
Pocket implant is widely used in deep-sub-micron CMOS technologies to combat short channel effects. It, however, brings anomalously large drain-induced threshold voltage shift and low output resistance to long channel devices. This creates a serious problem for high-performance analog circuits. In this paper, the first physical model of these effects are proposed and verified against data from a 0.18pm technology. This model is suitable for SPICE modeling.
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