The work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to
The electron concentration increases linearly with the ratio of gas−phase molar fraction of the dopant to III group sources (IV/III). The highest electron concentrations suitable for InGaAs plasmon−contact lay− ers of QCL was achieved only for disilane. We also observed a slight influence of the ratio of gas−phase molar fraction of V to III group sources (V/III) on the doping efficiency. Structural measurements using high−resolution X−ray diffraction revealed a dis− tinct influence of the doping concentration on InGaAs composition what caused a lattice mismatch in the range of -240¸-780 ppm for the samples doped by silane and disilane. It has to be taken into account during the growth of InGaAs contact layers to avoid internal stresses in QCL epitaxial structures.
This work presents the epitaxial growth and material properties of InGaAsN epilayers obtained by atmospheric pressure metal organic vapour phase epitaxy. The main goal was to obtain InGaAsN quaternary alloys lattice-matched to GaAs in order to apply them as an intrinsic thick absorber in p-i-n solar cells. It allows improvement of their photovoltaic parameters (e.g. short circuit current, open circuit voltage) by reducing the density of misfit dislocations. To overcome the main difficulties connected with achieving InGaAsN composition with In/N ratio of ~ 3, which guarantees a lattice matching to GaAs, epitaxial processes were carried out with different concentration of gallium source in the gas phase. Diffraction curves, measured using HRXRD, indicated that the main aim of this work was achieved for the gas molar ratio Ga/(Ga + In) = 0.935. The optical quality and surface morphology of the investigated structures examined by PL, CER and AFM methods are also presented and discussed.Publisher's Note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
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