Determination of composition of non-homogeneous GaInNAs layers

Pucicki, D.; Bielak, K.; Ściana, B.; Radziewicz, D.; Latkowska-Baranowska, M.; Kováč, J.; Vincze, Á.; Tłaczała, M.

doi:10.1016/j.jcrysgro.2015.10.011

Cited by 8 publications

(4 citation statements)

References 36 publications

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“…Since GaNAsSb is a quaternary alloy and its lattice constant depends on several parameters, a recently published approach [42] for HRXRD structural characterization based on diffraction dynamical theory [43] has been used for data analysis. It consists of the analysis of the measured 004 reflection rocking curves, which are continuously correlated with calculations of the bandgap energy for the different samples and compared with the experimental results obtained from ellipsometry (that are described below).…”

Section: Figurementioning

confidence: 99%

“…The initial GaAs material parameters, such as valence band energy, elastic stiffness constants, deformation potentials, lattice parameters as well as bowing parameters, were taken from literature [44]. More detailed information about this structural characterization algorithm can be found in Pucicki et al [42].…”

Section: Figurementioning

confidence: 99%

“…Taking into account the results obtained from SIMS presented above, the HRXRD data analysis is funded in some assumptions such as, N content is constant along the layer thickness, and Sb content is decreasing when going from the substrate to the top surface. Since GaNAsSb is a quaternary alloy and its lattice constant depends on several parameters, a recently published approach [42] for HRXRD structural characterization based on diffraction dynamical theory [43] has been used for data analysis. It consists of the analysis of the measured 004 reflection rocking curves, which are continuously correlated with calculations of the bandgap energy for the different samples and compared with the experimental results obtained from ellipsometry (that are described below).…”

Section: Structural and Electrical Characterizationmentioning

confidence: 99%

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Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers

Gabás¹,

Ochoa-Martínez²,

Bielak³

et al. 2020

Semicond. Sci. Technol.

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Dilute nitrides based on GaAs constitute a family of compounds whose main characteristic is the band-gap tunability, depending on the nitrogen content. In this work we have focussed our attention on the indium free dilute nitrides, i.e. GaNAsSb with a bandgap around 1.1 eV, to study the effects that has doping on the crystalline structure, electrical and optical properties of the material. For such purpose, p-doped and n-doped GaNAsSb layers were grown by Molecular Beam Epitaxy and characterized using X-ray diffraction, spectroscopic ellipsometry and photoreflectance among other techniques. The GaNAsSb optical properties match the double Band-Anticrossing model which is the proposed one to explain the dilute nitride band structure. However, the determined optical bandgap value does not follow any trend with doping, neither with concentration nor type. This is related with doping effects on the crystalline quality and layer composition, thus inducing a Sb gradient along layer thickness together with variations in N and Sb concentrations for different doping levels. Besides these structural variations, the complex refraction index, Hall mobility and carrier concentration as a function of temperature have been determined for these GaNAsSb layers.

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Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Section: Structural and Electrical Characterizationmentioning

confidence: 99%

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Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers

Gabás¹,

Ochoa-Martínez²,

Bielak³

et al. 2020

Semicond. Sci. Technol.

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“…The thickness and composition of all InGaAsN epilayers were determined from the simulations of the measured diffraction curves for the symmetrical (0 0 4) reflection, taking into account the bandgap value evaluated from the CER spectra. Detailed information about the algorithm used was previously published [17,18].…”

Section: 2 Experimental Detailsmentioning

confidence: 99%

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties

Ściana

Radziewicz

Dawidowski

et al. 2019

J Mater Sci: Mater Electron

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This work presents the epitaxial growth and material properties of InGaAsN epilayers obtained by atmospheric pressure metal organic vapour phase epitaxy. The main goal was to obtain InGaAsN quaternary alloys lattice-matched to GaAs in order to apply them as an intrinsic thick absorber in p-i-n solar cells. It allows improvement of their photovoltaic parameters (e.g. short circuit current, open circuit voltage) by reducing the density of misfit dislocations. To overcome the main difficulties connected with achieving InGaAsN composition with In/N ratio of ~ 3, which guarantees a lattice matching to GaAs, epitaxial processes were carried out with different concentration of gallium source in the gas phase. Diffraction curves, measured using HRXRD, indicated that the main aim of this work was achieved for the gas molar ratio Ga/(Ga + In) = 0.935. The optical quality and surface morphology of the investigated structures examined by PL, CER and AFM methods are also presented and discussed.Publisher's Note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

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Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques

López-Escalante

Ściana

Dawidowski

et al. 2018

Applied Surface Science

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This work presents the results of X-ray photoelectron spectroscopy studies on the bonding N configuration in InGaAsN epilayers grown by atmospheric pressure metal organic vapour phase epitaxy. Growth temperature has been tuned in order to obtain both, relaxed and strained layers. The studies were concentrated on analysing the influence of the growth temperature, post growth thermal annealing process and surface quality on the formation of Ga-N and InN bonds as well as N-related defects. The contamination of InGaAsN films by growth precursor residues and oxides has also been addressed. The growth temperature stands out as a decisive factor boosting InN bonds formation, while the thermal annealing seems to affect the N-related defects density in the layers.

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Determination of composition of non-homogeneous GaInNAs layers

Cited by 8 publications

References 36 publications

Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers

Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties

Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques

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