The influence of top electrode of InGaAsN/GaAs solar cell on their electrical parameters extracted from illuminated I–V characteristics

Dawidowski, Wojciech; Ściana, B.; Zborowska-Lindert, I.; Mikolášek, Miroslav; Bielak, K.; Badura, Mikołaj; Pucicki, D.; Radziewicz, D.; Kováč, J.; Tłaczała, M.

doi:10.1016/j.sse.2016.03.001

Cited by 17 publications

(9 citation statements)

References 17 publications

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“…) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Illuminating light equal to semiconductor band gap make produce electron and hole in them.…”

mentioning

confidence: 99%

Manufacturing Process of Solar Cells Using Cadmium Oxide (CdO) and Rhodium (III) Oxide (Rh2O3) Nanoparticles

Heidari¹

2016

J Biotechnol Biomater

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“…) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Illuminating light equal to semiconductor band gap make produce electron and hole in them.…”

mentioning

confidence: 99%

Manufacturing Process of Solar Cells Using Cadmium Oxide (CdO) and Rhodium (III) Oxide (Rh2O3) Nanoparticles

Heidari¹

2016

J Biotechnol Biomater

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“…Therefore, the growth of dilute nitrides has been scarcely studied in an atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) [10,11], which is a challenge for growers, but allows the reduction of the production cost of MJSCs based on these metastable compounds. Our earlier experiments [12][13][14][15] indicated a high In/N composition ratio (10 ÷ 30) in InGaAsN alloys grown by AP-MOVPE. Consequently it was impossible to obtain thick (~ 1 µm) layers with good material quality.…”

Section: Introductionmentioning

confidence: 83%

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties

Ściana

Radziewicz

Dawidowski

et al. 2019

J Mater Sci: Mater Electron

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This work presents the epitaxial growth and material properties of InGaAsN epilayers obtained by atmospheric pressure metal organic vapour phase epitaxy. The main goal was to obtain InGaAsN quaternary alloys lattice-matched to GaAs in order to apply them as an intrinsic thick absorber in p-i-n solar cells. It allows improvement of their photovoltaic parameters (e.g. short circuit current, open circuit voltage) by reducing the density of misfit dislocations. To overcome the main difficulties connected with achieving InGaAsN composition with In/N ratio of ~ 3, which guarantees a lattice matching to GaAs, epitaxial processes were carried out with different concentration of gallium source in the gas phase. Diffraction curves, measured using HRXRD, indicated that the main aim of this work was achieved for the gas molar ratio Ga/(Ga + In) = 0.935. The optical quality and surface morphology of the investigated structures examined by PL, CER and AFM methods are also presented and discussed.Publisher's Note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

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“…Next, we used the Shockley diode model to study overall performance of realistic perovskite/c‐Si solar cell. This model has been used and verified in many papers and can give correct relationships of electrical characteristics. The open‐circuit voltage ( V oc ) calculated from the J sc by the Shockley diode equation is given as

V_{oc} = \frac{k_{b} T}{q} ln ((), \frac{J_{sc}}{J_{0}} + 1),

where k b is the Boltzman constant and T is the room temperature (298 K).…”

Section: Methods and Validationmentioning

confidence: 99%

“…where, as illustrated in Figure 1C, R ext is the normalized reflectance at the initial interface, T θ is the transmittance of an incident light at angle Next, we used the Shockley diode model to study overall performance of realistic perovskite/c-Si solar cell. This model has been used and verified in many papers [35][36][37][38]…”

Section: Introductionmentioning

confidence: 99%

Perovskite/c‐Si tandem solar cells with realistic inverted architecture: Achieving high efficiency by optical optimization

Liu

Shen

2018

Progress in Photovoltaics

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Many theoretical analyses for perovskite/c‐Si monolithic tandem solar cells (TSCs) have shown optical optimization and high efficiency limits, but they use many idealized assumptions and draw some unpractical conclusions for experiments. In this work, we have introduced a composite method combining the finite difference time domain and light path analysis for the first time. By using this method, we have systematically calculated perovskite/c‐Si monolithic TSCs with inverted architecture based on realistic solar cell parameters. Theoretical results have demonstrated very good match of the experimental external quantum efficiencies of both subcells. More importantly, from optical and electrical point of view, we have analyzed current losses of such TSCs and proposed detailed optimization for achieving high efficiency. Finally, we have presented improved configuration of perovskite/c‐Si monolithic TSCs with addition of pyramids structure in front surface, which can effectively increase the tandem cell efficiency to 29.05%. This work can be served as a practical guidance for the realization of high‐efficient perovskite/c‐Si monolithic TSCs.

show abstract

The influence of top electrode of InGaAsN/GaAs solar cell on their electrical parameters extracted from illuminated I–V characteristics

Cited by 17 publications

References 17 publications

Manufacturing Process of Solar Cells Using Cadmium Oxide (CdO) and Rhodium (III) Oxide (Rh2O3) Nanoparticles

Manufacturing Process of Solar Cells Using Cadmium Oxide (CdO) and Rhodium (III) Oxide (Rh2O3) Nanoparticles

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties

Perovskite/c‐Si tandem solar cells with realistic inverted architecture: Achieving high efficiency by optical optimization

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